Memory controller

ABSTRACT

A memory component having a first and second interface. The first interface is provided to sample address information in response to a first clock signal. The first interface includes inputs to sample at least two bits of the address information in succession during a clock cycle of the first clock signal. The second interface is provided to sample data in response to a second clock signal, having a frequency that is at least twice the frequency of the first clock signal. The second interface includes inputs to sample at least two bits of data in succession during a clock cycle of the second clock signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/111,816 filed Apr. 29, 2008, which is a continuation of U.S. patentSer. No. 11/280,560 filed Nov. 15, 2005, which is a continuation of U.S.patent application Ser. No. 11/094,137 filed Mar. 31, 2005 (now U.S.Pat. No. 7,209,397), which is a continuation of U.S. patent applicationSer. No. 10/732,533 filed Dec. 11, 2003 (now U.S. Pat. No. 7,225,311),which is a continuation of U.S. patent application Ser. No. 09/841,911filed Apr. 24, 2001 (now U.S. Pat. No. 6,675,272), all of which arehereby incorporated by reference in their entirety.

TECHNICAL FIELD

The invention relates generally to information storage and retrievaland, more specifically, to coordinating memory components.

BACKGROUND

As computers and data processing equipment have grown in capability,users have developed applications that place increasing demands on theequipment. Thus, there is a continually increasing need to process moreinformation in a given amount of time. One way to process moreinformation in a given amount of time is to process each element ofinformation in a shorter amount of time. As that amount of time isshortened, it approaches the physical speed limits that govern thecommunication of electronic signals. While it would be ideal to be ableto move electronic representations of information with no delay, suchdelay is unavoidable. In fact, not only is the delay unavoidable, but,since the amount of delay is a function of distance, the delay variesaccording to the relative locations of the devices in communication.

Since there are limits to the capabilities of a single electronicdevice, it is often desirable to combine many devices, such as memorycomponents, to function together to increase the overall capacity of asystem. However, since the devices cannot all exist at the same point inspace simultaneously, consideration must be given to operation of thesystem with the devices located diversely over some area.

Traditionally, the timing of the devices' operation was not acceleratedto the point where the variation of the location of the devices wasproblematic to their operation. However, as performance demands haveincreased, traditional timing paradigms have imposed barriers toprogress.

One example of an existing memory system uses DDR (double data rate)memory components. The memory system includes a memory controller and amemory module. A propagation delay occurs along an address bus betweenthe memory controller and the memory module. Another propagation delayoccurs along the data bus between the memory controller and the memorymodule.

The distribution of the control signals and a control clock signal inthe memory module is subject to strict constraints. Typically, thecontrol wires are routed so there is an equal length to each memorycomponent. A “star” or “binary tree” topology is typically used, whereeach spoke of the star or each branch of the binary tree is of equallength. The intent is to eliminate any variation of the timing of thecontrol signals and the control clock signal between different memorycomponents of a memory module, but the balancing of the length of thewires to each memory component compromises system performance (somepaths are longer than they need to be). Moreover, the need to routewires to provide equal lengths limits the number of memory componentsand complicates their connections.

In such DDR systems, a data strobe signal is used to control timing ofboth data read and data write operations. The data strobe signal is nota periodic timing signal, but is instead only asserted when data isbeing transferred. The timing signal for the control signals is aperiodic clock. The data strobe signal for the write data is aligned tothe clock for the control signals. The strobe for the read data isdelayed by delay relative to the control clock equal to the propagationdelay along the address bus plus the propagation delay along the databus. A pause in signaling must be provided when a read transfer isfollowed by a write transfer to prevent interference along varioussignal lines used. Such a pause reduces system performance. Such asystem is constrained in several ways. First, because the control wireshave a star topology or a binary tree routing, reflections occur at thestubs (at the ends of the spokes or branches). The reflections increasethe settling time of the signals and limit the transfer bandwidth of thecontrol wires. Consequently, the time interval during which a piece ofinformation is driven on a control wire will be longer than the time ittakes a signal wavefront to propagate from one end of the control wireto the other. Additionally, as more modules are added to the system,more wire stubs are added to each conductor of the data bus, therebyadding reflections from the stubs. This increases the settling time ofthe signals and further limits the transfer bandwidth of the data bus.

Also, because there is a constraint on the relationship between thepropagation delays along the address bus and the data bus in thissystem, it is hard to increase the operating frequency without violatinga timing parameter of the memory component. If a clock signal isindependent of another clock signal, those clock signals and componentsto which they relate are considered to be in different clock domains.Within a memory component, the write data receiver is operating in adifferent clock domain from the rest of the logic of the memorycomponent, and the domain crossing circuitry will only accommodate alimited amount of skew between these two domains. Increasing thesignaling rate of data will reduce this skew parameter (when measured intime units) and increase the chance that a routing mismatch between dataand control wires on the board will create a timing violation.

Also, most DDR systems have strict limits on how large the address busand data bus propagation delays may be (in time units). These are limitsimposed by the memory controller and the logic that is typicallyincluded for crossing from the controller's read data receiver clockdomain into the clock domain used by the rest of the controller. Thereis also usually a limit (expressed in clock cycles) on how large the sumof these propagation delays can be. If the motherboard layout makes thissum too large (when measured in time units), the signal rate of thesystem may have to be lowered, thereby decreasing performance.

In another example of an existing memory system, the control wires anddata bus are connected to a memory controller and are routed togetherpast memory components on each memory module. One clock is used tocontrol the timing of write data and control signals, while anotherclock is used to control the timing of read data. The two clocks arealigned at the memory controller. Unlike the previous prior art example,these two timing signals are carried on separate wires.

In such an alternate system, several sets of control wires and a databus may be used to intercouple the memory controller to one or more ofthe memory components. The need for separate sets of control wiresintroduces additional cost and complexity, which is undesirable. Also,if a large capacity memory system is needed, the number of memorycomponents on each data bus will be relatively large. This will tend tolimit the maximum signal rate on the data bus, thereby limitingperformance.

Thus, a technique is needed to coordinate memory operations amongdiversely-located memory components.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a memory system having a singlerank of memory components with which an embodiment of the invention maybe implemented.

FIG. 2 is a block diagram illustrating clocking details for one slice ofa rank of memory components of a memory system such as that illustratedin FIG. 1 in accordance with an embodiment of the invention.

FIG. 3 is a timing diagram illustrating address and control timingnotations used in timing diagrams of other Figures.

FIG. 4 is a timing diagram illustrating data timing notations used intiming diagrams of other Figures.

FIG. 5 is a timing diagram illustrating timing of signals communicatedover the address and control bus (Addr/Ctrl or AC_(S,M)) in accordancewith an embodiment of the invention.

FIG. 6 is a timing diagram illustrating timing of signals communicatedover the data bus (DQ_(S,M)) in accordance with an embodiment of theinvention.

FIG. 7 is a timing diagram illustrating system timing at a memorycontroller component in accordance with an embodiment of the invention.

FIG. 8 is a timing diagram illustrating alignment of clocksAClk_(S1,M1), WClk_(S1,M1), and RClk_(S1,M1) at the memory component inslice 1 of rank 1 in accordance with an embodiment of the invention.

FIG. 9 is a timing diagram illustrating alignment of clocksAClk_(SNs,M1), WClk_(SNs,M1), and RClk_(SNs,M1) at the memory componentin slice N_(S) of rank 1 in accordance with an embodiment of theinvention.

FIG. 10 is a block diagram illustrating further details for one slice ofa rank of memory components of a memory system such as that illustratedin FIG. 1 in accordance with an embodiment of the invention.

FIG. 11 is a block diagram illustrating the clocking elements of oneslice of a rank of the memory components of a memory system such as thatillustrated in FIG. 1 in accordance with an embodiment of the invention.

FIG. 12 is a block diagram illustrating details for the memorycontroller component of a memory system such as that illustrated in FIG.1 in accordance with an embodiment of the invention.

FIG. 13 is a block diagram illustrating the clocking elements of amemory controller component of a memory system such as that illustratedin FIG. 1 in accordance with an embodiment of the invention.

FIG. 14 is a logic diagram illustrating details of the ClkC8 block ofthe memory controller component such as that illustrated in FIG. 12 inaccordance with an embodiment of the invention.

FIG. 15 is a block diagram illustrating how the ClkC8[N:1] signals areused in the transmit and receive blocks of the memory controllercomponent such as that illustrated in FIG. 12 in accordance with anembodiment of the invention.

FIG. 16 is a block diagram illustrating a circuit for producing a ClkC8Bclock and a ClkC1B clock based on the ClkC8A clock in accordance with anembodiment of the invention.

FIG. 17 is a block diagram illustrating details of the PhShC block inaccordance with an embodiment of the invention.

FIG. 18 is a block diagram illustrating the logic details of the skiplogic in a controller slice of the receive block of a memory controllercomponent in accordance with an embodiment of the invention.

FIG. 19 is a timing diagram illustrating the timing details of the skiplogic in a controller slice of the receive block of a memory controllercomponent in accordance with an embodiment of the invention.

FIG. 20 is a block diagram illustrating the logic details of the skiplogic in a controller slice of the transmit block of a memory controllercomponent in accordance with an embodiment of the invention.

FIG. 21 is a timing diagram illustrating the timing details of the skiplogic in a controller slice of the transmit block of a memory controllercomponent in accordance with an embodiment of the invention.

FIG. 22 is a timing diagram illustrating an example of a data clockingarrangement in accordance with an embodiment of the invention.

FIG. 23 is a timing diagram illustrating an example of a data clockingarrangement in accordance with an embodiment of the invention.

FIG. 24 is a timing diagram illustrating timing at the memory controllercomponent for the example of the data clocking arrangement illustratedin FIG. 23 in accordance with an embodiment of the invention.

FIG. 25 is a timing diagram illustrating timing at a first slice of arank of memory components for the example of the data clockingarrangement illustrated in FIG. 23 in accordance with an embodiment ofthe invention.

FIG. 26 is a timing diagram illustrating timing a last slice of a rankof memory components for the example of the data clocking arrangementillustrated in FIG. 23 in accordance with an embodiment of theinvention.

FIG. 27 is a block diagram illustrating a memory system that maycomprise multiple ranks of memory components and multiple memory modulesin accordance with an embodiment of the invention.

FIG. 28 is a block diagram illustrating a memory system that maycomprise multiple ranks of memory components and multiple memory modulesin accordance with an embodiment of the invention.

FIG. 29 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules inaccordance with an embodiment of the invention.

FIG. 30 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with adedicated control/address bus per memory module in accordance with anembodiment of the invention.

FIG. 31 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared among the memory modules inaccordance with an embodiment of the invention.

FIG. 32 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention.

FIG. 33 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with adedicated, sliced control/address bus per memory module in accordancewith an embodiment of the invention.

FIG. 34 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention.

FIG. 35 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention.

DETAILED DESCRIPTION

A method and apparatus for coordinating memory operations amongdiversely-located memory components is described. In accordance with anembodiment of the invention, wave-pipelining is implemented for anaddress bus coupled to a plurality of memory components. The pluralityof memory components are configured according to coordinates relating tothe address bus propagation delay and the data bus propagation delay. Atiming signal associated with address and/or control signals whichduplicates the propagation delay of these signals is used to coordinatememory operations. The address bus propagation delay, or common addressbus propagation delay, refers to the delay for a signal to travel alongan address bus between the memory controller component and a memorycomponent. The data bus propagation delay refers to the delay for asignal to travel along a data bus between the memory controllercomponent and a memory component.

According to one embodiment of the invention, a memory system includesmultiple memory modules providing multiple ranks and multiple slices ofmemory components. Such a system can be understood with reference toFIG. 27. The memory system of FIG. 27 includes memory module 2703 andmemory module 2730. Memory module 2703 includes a rank that includesmemory components 2716-2618 and another rank that includes memorycomponents 2744-2746.

The memory system is organized into slices across the memory controllercomponent and the memory modules. The memory system of FIG. 27 includesa slice 2713 that includes a portion of memory controller 2702, aportion of memory module 2703 including memory components 2716 and 2744,and a portion of memory module 2730 including memory components 2731 and2734. The memory system of FIG. 27 includes another slice 2714 thatincludes another portion of memory controller 2702, another portion ofmemory module 2703 including memory components 2717 and 2745, andanother portion of memory module 2730 including memory components 2732and 2735. The memory system of FIG. 27 further includes yet anotherslice 2715 that includes yet another portion of memory controller 2702,yet another portion of memory module 2703 including memory components2718 and 2746, and yet another portion of memory module 2730 includingmemory components 2733 and 2736.

The use of multiple slices and ranks, which may be implemented usingmultiple modules, allows efficient interconnection of a memorycontroller and several memory components while avoiding degradation ofperformance that can occur when a data bus or address bus has a largenumber of connections to it. With a separate data bus provided for eachslice, the number of connections to each data bus can be kept to areasonable number. The separate data buses can carry different signalsindependently of each other. A slice can include one or more memorycomponents per module. For example, a slice can include one memorycomponent of each rank. Note that the term slice may be used to refer tothe portion of a slice excluding the memory controller. In this manner,the memory controller can be viewed as being coupled to the slices. Theuse of multiple modules allows memory components to be organizedaccording to their path lengths to a memory controller. Even slightdifferences in such path lengths can be managed according to theorganization of the memory components into ranks. The organization ofmemory components according to ranks and modules allows address andcontrol signals to be distributed efficiently, for example through thesharing of an address bus within a rank or module.

In one embodiment, a slice can be understood to include several elementscoupled to a data bus. As one example, these elements can include aportion of a memory controller component, one or more memory componentson one module, and, optionally, one or more memory components on anothermodule. In one embodiment, a rank can be understood to include severalmemory components coupled by a common address bus. The common addressbus may optionally be coupled to multiple ranks on the module or tomultiple modules. The common address bus can connect a memory controllercomponent to each of the slices of a rank in succession, therebyallowing the common address bus to be routed from a first slice of therank to a second slice of the rank and from the second slice of the rankto a third slice of the rank. Such a configuration can simplify therouting of the common address bus.

For discussion purposes, a simplified form of a memory system is firstdiscussed in order to illustrate certain concepts, whereas a morecomplex memory system that includes a plurality of modules and ranks isdiscussed later in the specification.

FIG. 1 is a block diagram illustrating a memory system having a singlerank of memory components with which an embodiment of the invention maybe implemented. Memory system 101 comprises memory controller component102 and memory module 103. Address clock 104 provides an address clocksignal that serves as a timing signal associated with the address andcontrol signals that propagate along address bus 107. Address clock 104provides its address clock signal along address clock conductor 109,which is coupled to memory controller component 102 and to memory module103. The address and control signals are sometimes referred to as simplythe address signals or the address bus. However, since control signalsmay routed according to a topology common to address signals, theseterms, when used, should be understood to include address signals and/orcontrol signals.

Write clock 105 provides a write clock signal that serves as a timingsignal associated with the data signals that propagate along data bus108 during write operations. Write clock 105 provides its write clocksignal along write clock conductor 110, which is coupled to memorycontroller component 102 and memory module 103. Read clock 106 providesa read clock signal that serves as a timing signal associated with thedata signals that propagate along data bus 108 during read operations.Read clock 106 provides its read clock signal along read clock conductor111, which is coupled to memory controller component 102 and memorymodule 103.

Termination component 120 is coupled to data bus 108 near memorycontroller component 102. As one example, termination component 120 maybe incorporated into memory controller component 102. Terminationcomponent 121 is coupled to data bus 108 near memory module 103.Termination component 121 is preferably incorporated into memory module103. Termination component 123 is coupled to write clock conductor 110near memory component 116 of memory module 103. Termination component123 is preferably incorporated into memory module 103. Terminationcomponent 124 is coupled to read clock conductor 111 near memorycontroller component 102. As an example, termination component 124 maybe incorporated into memory controller component 102. Terminationcomponent 125 is coupled to read clock conductor 111 near memorycomponent 116 of memory module 103. Termination component 125 ispreferably incorporated into memory module 103. The terminationcomponents may utilize active devices (e.g., transistors or othersemiconductor devices) or passive devices (e.g. resistors, capacitors,or inductors). The termination components may utilize an openconnection. The termination components may be incorporated in one ormore memory controller components or in one or more memory components,or they may be separate components on a module or on a main circuitboard.

Memory module 103 includes a rank 112 of memory components 116, 117, and118. The memory module 103 is organized so that each memory componentcorresponds to one slice. Memory component 116 corresponds to slice 113,memory component 117 corresponds to slice 114, and memory component 118corresponds to slice 115. Although not shown in FIG. 1, the specificcircuitry associated with the data bus, write clock and associatedconductors, and read clock and associated conductors that areillustrated for slice 113 is replicated for each of the other slices 114and 115. Thus, although such circuitry has not been illustrated in FIG.1 for simplicity, it is understood that such dedicated circuitry on aslice-by-slice basis is preferably included in the memory system shown.

Within memory module 103, address bus 107 is coupled to each of memorycomponents 116, 117, and 118. Address clock conductor 109 is coupled toeach of memory components 116, 117, and 118. At the terminus of addressbus 107 within memory module 103, termination component 119 is coupledto address bus 107. At the terminus of address clock conductor 109,termination component 122 is coupled to address clock conductor 109.

In the memory system of FIG. 1, each data signal conductor connects onecontroller data bus node to one memory device data bus node. However, itis possible for each control and address signal conductor to connect onecontroller address/control bus node to an address/control bus node oneach memory component of the memory rank. This is possible for severalreasons. First, the control and address signal conductors passunidirectional signals (the signal wavefront propagates from thecontroller to the memory devices). It is easier to maintain good signalintegrity on a unidirectional signal conductor than on a bidirectionalsignal conductor (like a data signal conductor). Second, the address andcontrol signals contain the same information for all memory devices. Thedata signals will be different for all memory devices. Note that theremight be some control signals (such as write enable signals) which aredifferent for each memory device—these are treated as unidirectionaldata signals, and are considered to be part of the data bus for thepurposes of this distinction. For example, in some instances, the databus may include data lines corresponding to a large number of bits,whereas in some applications only a portion of the bits carried by thedata bus may be written into the memory for a particular memoryoperation. For example, a 16-bit data bus may include two bytes of datawhere during a particular memory operation only one of the two bytes isto be written to a particular memory device. In such an example,additional control signals may be provided along a similar path as thattaken by the data signals such that these control signals, which controlwhether or not the data on the data bit lines is written, traverse thesystem along a path with a delay generally matched to that of the datasuch that the control signals use in controlling the writing of the datais aptly timed. Third, routing the address and control signals to allthe memory devices saves pins on the controller and memory moduleinterface.

As a result, the control and address signals will be propagated on wiresthat will be longer than the wires used to propagate the data signals.This enables the data signals to use a higher signaling rate than thecontrol and address signals in some cases.

To avoid impairment of the performance of the memory system, the addressand control signals may be wave-pipelined in accordance with anembodiment of the invention. The memory system is configured to meetseveral conditions conducive to wave-pipelining. First, two or morememory components are organized as a rank. Second, some or all addressand control signals are common to all memory components of the rank.Third, the common address and control signals propagate with lowdistortion (e.g. controlled impedance). Fourth, the common address andcontrol signals propagate with low intersymbol-interference (e.g. singleor double termination).

Wave-pipelining occurs when Tbit<Twire, where the timing parameter Twireis defined to be the time delay for a wavefront produced at thecontroller to propagate to the termination component at the end of thewire carrying the signal, and the timing parameter Tbit is defined to bethe time interval between successive pieces (bits) of information on thewire. Such pieces of information may represent individual bits ormultiple bits encoded for simultaneous transmission. Wave-pipelinedsignals on wires are incident-wave sampled by receivers attached to thewire. This means that sampling will generally take place before thewavefront has reflected from the end of the transmission line (e.g., thewire).

It is possible to extend the applicability of the invention from asingle rank to multiple ranks of memory components in several ways.First, multiple ranks of memory components may be implemented on amemory module. Second, multiple memory modules may be implemented in amemory system. Third, data signal conductors may be dedicated, shared,or “chained” to each module. Chaining involves allowing a bus to passthrough one module, connecting with the appropriate circuits on thatmodule, whereas when it exits that particular module it may then enteranother module or reach termination. Examples of such chaining ofconductors are provided and described in additional detail in FIGS. 29,32, and 35 below. Fourth, common control and address signal conductorsmay be dedicated, shared, or chained to each module. Fifth, data signalconductors may be terminated transmission lines or terminated stubs oneach module. For this discussion, transmission lines are understood torepresent signal lines that have sufficient lengths such thatreflections and other transmission line characteristics must beconsidered and accounted for in order to assure proper signaltransmission over the transmission lines. In contrast, terminated stubsare understood to be of such limited length that the parasiticreflections and other transmission line characteristics associated withsuch stubs can generally be ignored. Sixth, common control and addresssignal conductors may be terminated transmission lines or terminatedstubs on each module. Permitting the shared address and control signalsto be wave-pipelined allows their signaling rate to be increased,thereby increasing the performance of the memory system.

FIG. 2 is a block diagram illustrating clocking details for one slice ofa rank of memory components of a memory system such as that illustratedin FIG. 1 in accordance with an embodiment of the invention. The memorycontroller component 102 includes address transmit block 201, which iscoupled to address bus 107 and address clock conductor 109. The memorycontroller component 102 also includes, on a per-slice basis, datatransmit block 202 and data receive block 203, which are coupled to databus 108. Data transmit block 202 is coupled to write clock conductor110, and data receive block 203 is coupled to read clock conductor 111.

Within each memory component, such as memory component 116, an addressreceive block 204, a data receive block 205, and a data transmit block206 are provided. The address receive block 204 is coupled to addressbus 107 and address clock conductor 109. The data receive block 205 iscoupled to data bus 108 and write clock conductor 110. The data transmitblock 206 is coupled to data bus 108 and read clock conductor 111.

A propagation delay 207, denoted t_(PD0), exists along address bus 107between memory controller component 102 and memory module 103. Apropagation delay 208, denoted t_(PD1), exists along address bus 107within memory module 103.

The basic topology represented in FIG. 2 has several attributes. Itincludes a memory controller. It includes a single memory module. Itincludes a single rank of memory components. It includes a sliced databus (DQ), with each slice of wires connecting the controller to a memorycomponent. It includes a common address and control bus (Addr/Ctrl orAC) connecting the controller to all the memory components. Sourcesynchronous clock signals flow with data, control, and address signals.Control and address signals are unidirectional and flow from controllerto memory components. Data signals are bi-directional and may flow fromcontroller to memory components (write operation) or may flow frommemory components to controller (read operation). There may be somecontrol signals with the same topology as data signals, but which flowonly from controller to memory components. Such signals may be used formasking write data in write operations, for example. These may betreated as unidirectional data signals for the purpose of thisdiscussion. The data, address, control, and clock wires propagate withlow distortion (e.g., along controlled impedance conductors). The data,address, control, and clock wires propagate with low inter-symbolinterference (e.g., there is a single termination on unidirectionalsignals and double termination on bi-directional signals). Theseattributes are listed to maintain clarity. It should be understood thatthe invention is not constrained to be practiced with these attributesand may be practiced so as to include other system topologies.

In FIG. 2, there is a two dimensional coordinate system based on theslice number of the data buses and the memory components (S={0, 1, . . .N_(S)}) and the module number (M={0, 1}). Here a slice number of “0’ anda module number of ‘0’ refer to the controller. This coordinate systemallows signals to be named at different positions on a wire. Thiscoordinate system will also allow expansion to topologies with more thanone memory rank or memory module.

FIG. 2 also shows the three clock sources (address clock 104, whichgenerates the AClk signal, write clock 105, which generates the WClksignal, and read clock 106, which generates the RClk signal) whichgenerate the clocking reference signals for the three types ofinformation transfer. These clock sources each drive a clock wire thatis parallel to the signal bus with which it is associated. Preferably,the positioning of the clock sources within the system is such that thephysical position on the clock line at which the clock source drives thecorresponding clock signal is proximal to the related driving point forthe bus line such that the propagation of the clock for a particular busgenerally tracks the propagation of the related information on theassociated bus. For example, the positioning of the address clock (AClkclock 104) is preferably close to the physical position where theaddress signals are driven onto the address bus 107. In such aconfiguration, the address clock will experience similar delays as itpropagates throughout the circuit as those delays experienced by theaddress signals propagating along a bus that follows generally the sameroute as the address clock signal line.

The clock signal for each bus is related to the maximum bit rate on thesignals of the associated bus. This relationship is typically an integeror integer ratio. For example, the maximum data rate may be twice thefrequency of the data clock signals. It is also possible that one or twoof the clock sources may be “virtual” clock sources; the three clocksources will be in an integral-fraction-ratio (N/M) relationship withrespect to one another, and any of them may be synthesized from eitherof the other two using phase-locked-loop (PLL) techniques to set thefrequency and phase. Virtual clock sources represent a means by whichthe number of actual clock sources within the circuit can be minimized.For example, a WClk clock might be derived from an address clock (AClk)that is received by a memory device such that the memory device is notrequired to actually receive a WClk clock from an external source. Thus,although the memory device does not actually receive a unique,individually-generated WClk clock, the WClk clock generated from theAClk clock is functionally equivalent. The phase of a synthesized clocksignal will be adjusted so it is the same as if it were generated by aclock source in the positions shown.

Any of the clock signals shown may alternatively be a non-periodicsignal (a strobe control signal, for example) which is asserted onlywhen information is present on the associated bus. As was describedabove with respect to clock sources, the non-periodic signal sources arepreferably positioned, in a physical sense, proximal to the appropriatebuses to which they correspond such that propagation delays associatedwith the non-periodic signals generally match those propagation delaysof the signals on the buses to which they correspond.

FIG. 3 is a timing diagram illustrating address and control timingnotations used in timing diagrams of other Figures. In FIG. 3, a risingedge 302 of the AClk signal 301 occurs at a time 307 during transmissionof address information ACa 305. A rising edge 303 of the AClk signaloccurs at a time 308 during transmission of address information ACb 306.Time 308 occurs at a time t_(CC) before the time 309 of the next risingedge 304 of AClk signal 301. The time tCC represents a cycle time of aclock circuit of a memory controller component. Dashed lines in thetiming diagrams are used to depict temporal portions of a signalcoincident with address information or datum information. For example,the AClk signal 301 includes a temporal portion corresponding to thepresence of address information ACa 305 and another temporal portioncorresponding to the presence of address information ACb 306. Addressinformation can be transmitted over an address bus as an address signal.

If one bit per wire occurs per t_(CC), address bit 311 is transmittedduring cycle 310. If two bits per wire occur per t_(CC), address bits313 and 314 are transmitted during cycle 312. If four bits per wireoccur per t_(CC), address bits 316, 317, 318, and 319 are transmittedduring cycle 315. If eight bits per wire occur per t_(CC), address bits321, 322, 323, 324, 325, 326, 327, and 328 are transmitted during cycle320. Note that the drive and sample points for each bit window may bedelayed or advanced by an offset (up to one bit time, which ist_(CC)/N_(AC)), depending upon the driver and sampler circuit techniquesused. The parameters N_(AC) and N_(DQ) represent the number of bits pert_(CC) for the address/control and data wires, respectively. In oneembodiment, a fixed offset is used. An offset between the drive/samplepoints and the bit windows should be consistent between the drivingcomponent and the sampling component. It is preferable that in aparticular system, any offset associated with the drive point for a busis consistent throughout the entire system. Similarly, any understoodsampling offset with respect to the bus should also be consistent. Forexample, if data is expected to be driven at a point generallycorresponding to a rising edge of a related clock signal for one databus line, that understood offset (or lack thereof) is preferablyconsistently used for all data lines. Note that the offset associatedwith driving data onto the bus may be completely different than thatassociated with sampling data carried by the bus. Thus, continuing withthe example above, the sample point for data driven generally coincidentwith a rising edge may be 180 degrees out of phase with respect to therising edge such that the valid window of the data is better targeted bythe sample point.

FIG. 4 is a timing diagram illustrating data timing notations used intiming diagrams of other Figures. In FIG. 4, a rising edge 402 of theWClk signal 401 occurs at a time 407 during transmission of write datuminformation Da 405. A rising edge 403 of the WClk signal 401 occurs at atime 408. A rising edge 404 of the WClk signal 401 occurs at a time 409during transmission of read datum information Qb 406. Time 407 isseparated from time 408 by a time t_(CC), and time 408 is separated fromtime 409 by a time t_(CC). The time t_(CC) represents the duration of aclock cycle. RClk signal 410 includes rising edge 411 and rising edge412. These rising edges may be used as references to clock cycles ofRClk signal 410. For example, transmission of write datum information Da405 occurs during a clock cycle of RClk signal 410 that includes risingedge 411, and transmission of read datum information Qb 406 occursduring a clock cycle of RClk signal 410 that includes rising edge 412.As is apparent to one of ordinary skill in the art, the clock cycle timeassociated with the address clock may differ from the clock cycle timeassociated with the read and/or write clocks.

Write datum information is an element of information being written andcan be transmitted over a data bus as a write data signal. Read datuminformation is an element of information being read and can betransmitted over a data bus as a read data signal. As can be seen, thenotation Dx is used to represent write datum information x, while thenotation Qy is used to represent read datum information y. Signals,whether address signals, write data signals, read data signals, or othersignals can be applied to conductor or bus for a period of time referredto as an element time interval. Such an element time interval can beassociated with an event occurring on a conductor or bus that carries atiming signal, where such an event may be referred to as a timing signalevent. Examples of such a timing signal include a clock signal, a timingsignal derived from another signal or element of information, and anyother signal from which timing may be derived. In a memory accessoperation, the time from when an address signal begins to be applied toan address bus to when a data signal corresponding to that addresssignal begins to be applied to a data bus can be referred to as anaccess time interval. If one bit per wire occurs per t_(CC), datum bit415 is transmitted during cycle 414. If two bits per wire occur pert_(CC), data bits 417 and 418 are transmitted during cycle 416. If fourbits per wire occur per t_(CC), data bits 420, 421, 422, and 423 aretransmitted during cycle 419. If eight bits per wire occur per t_(CC),data bits 425, 426, 427, 428, 429, 430, 431, and 432 are transmittedduring cycle 424. Note that the drive and sample points for each bitwindow may be delayed or advanced by an offset (up to one bit time,which is t_(CC)/N_(DQ)), depending upon the driver and sampler circuittechniques used. In one embodiment, a fixed offset is used. An offsetbetween the drive/sample points and the bit windows should be consistentbetween the driving component and the sampling component. For example,if the data window is assumed to be positioned such that data will besampled on the rising edge of the appropriate clock signal at thecontroller, a similar convention should be used at the memory devicesuch that valid data is assumed to be present at the rising edge of thecorresponding clock at that position within the circuit as well.

If one bit per wire occurs per t_(CC), datum bit 434 is transmittedduring cycle 433. If two bits per wire occur per t_(CC), data bits 436and 437 are transmitted during cycle 435. If four bits per wire occurper t_(CC), data bits 439, 440, 441, and 442 are transmitted duringcycle 438. If eight bits per wire occur per t_(CC), data bits 444, 445,446, 447, 448, 449, 450, and 451 are transmitted during cycle 443. Notethat the drive and sample points for each bit window may be delayed oradvanced by an offset (up to one bit time, which is t_(CC)/N_(DQ)),depending upon the driver and sampler circuit techniques used. In oneembodiment, a fixed offset is used. An offset between the drive/samplepoints and the bit windows should be consistent between the drivingcomponent and the sampling component. As stated above, it is preferablethat in a particular system, any offset associated with the drive pointor sampling point for a bus is consistent throughout the entire system.

The column cycle time of the memory component represents the timeinterval required to perform successive column access operations (readsor writes). In the example shown, the AClk, RClk, and WClk clock signalsare shown with a cycle time equal to the column cycle time. As isapparent to one of ordinary skill in the art, the cycle time of theclock signals used in the system may be different from the column cycletime in other embodiments.

Alternatively, any of the clocks could have a cycle time that isdifferent than the column cycle time. The appropriate-speed clock fortransmitting or receiving signals on a bus can always be synthesizedfrom the clock that is distributed with the bus as long as there is aninteger or integral-fraction-ratio between the distributed clock and thesynthesized clock. As mentioned earlier, any of the required clocks canbe synthesized from any of the distributed clocks from the other buses.

This discussion will assume a single bit is sampled or driven on eachwire during each t_(CC) interval in order to keep the timing diagrams assimple as possible. However, the number of bits that are transmitted oneach signal wire during each t_(CC) interval can be varied. Theparameters N_(AC) and N_(DQ) represent the number of bits per t_(CC) forthe address/control and data wires, respectively. The distributed orsynthesized clock is multiplied up to create the appropriate clock edgesfor driving and sampling the multiple bits per t_(CC). Note that thedrive and sample points for each bit window may be delayed or advancedby an offset (up to one bit time, which is t_(CC)/N_(AC) ort_(CC)/N_(DQ)), depending upon the driver and sampler circuit techniquesused. In one embodiment, a fixed offset is used. An offset between thedrive/sample points and the bit windows should be consistent between thedriving component and the sampling component. Once again, as statedabove, it is preferable that in a particular system, any offsetassociated with the drive point or sampling point for a bus isconsistent throughout the entire system.

FIG. 5 is a timing diagram illustrating timing of signals communicatedover the address and control bus (Addr/Ctrl or AC_(S,M)) in accordancewith an embodiment of the invention. This bus is accompanied by a clocksignal AClk_(S,M) which sees essentially the same wire path as the bus.The subscripts (S,M) indicate the bus or clock signal at a particularmodule M or a particular slice S. The controller is defined to be slicezero.

The waveform for AClk clock signal 501 depicts the timing of the AClkclock signal at the memory controller component. A rising edge 502 ofAClk clock signal 501 occurs at time 510 and is associated with thetransmission of address information ACa 518. A rising edge 503 of AClkclock signal 501 occurs at time 511 and is associated with thetransmission of address information ACb 519.

The waveform for AClk clock signal 520 depicts the timing of the AClkclock signal at a memory component located at slice one. The AClk signal520 is delayed a delay of by t_(PD0) from signal 501. For example, therising edge 523 of signal 520 is delayed by a delay of t_(PD0) from edge502 of signal 501. The address information ACa 537 is associated withthe rising edge 523 of signal 520. The address information ACb 538 isassociated with the rising edge 525 of signal 520.

The waveform for AClk clock signal 539 depicts the timing of the AClkclock signal at the memory component located at slice N_(S). The AClksignal 539 is delayed by a delay of t_(PD1) from signal 520. Forexample, the rising edge 541 of signal 539 is delayed by a delay oft_(PD1) from edge 523 of signal 520. The address information ACa 548 isassociated with the rising edge 541 of signal 539. The addressinformation ACb 549 is associated with the rising edge 542 of signal539.

The clock signal AClk is shown with a cycle time that corresponds to thecolumn cycle time. As previously mentioned, it could also have a shortercycle time as long as the frequency and phase are constrained to allowthe controller and memory components to generate the necessary timingpoints for sampling and driving the information on the bus Likewise, thebus is shown with a single bit per wire transmitted per t_(CC) interval.As previously mentioned, more than one bit could be transferred in eacht_(CC) interval since the controller and memory components are able togenerate the necessary timing points for sampling and driving theinformation on the bus. Note that the actual drive point for the bus(the point at which data signals, address signals, and/or controlsignals are applied to the bus) may have an offset from what is shown(relative to the rising and falling edges of the clock)—this will dependupon the design of the transmit and receive circuits in the controllerand memory components. In one embodiment, a fixed offset is used. Anoffset between the drive/sample points and the bit windows should beconsistent between the driving component and the sampling component. Asreiterated above, it is preferable that in a particular system, anyoffset associated with the drive point or sampling point for a bus isconsistent throughout the entire system. It should be noted in FIG. 5 isthat there is a delay t_(PD0) in the clock AClk_(S,M) and bus AC_(S,M)as they propagate from the controller to the first slice. As indicated,AClk signal 520 is shifted in time and space from AClk signal 501. Alsonote that there is a second delay t_(PD1) in the clock AClk_(S,M) andbus AC_(S,M) as they propagate from the first slice to the last sliceN_(S). There will be a delay of t_(PD1)/(N_(S)−1) as the clock and bustravel between each slice. Note that this calculation assumes generallyequal spacing between the slices, and, if such physical characteristicsare not present in the system, the delay will not conform to thisformula. Thus, as indicated, AClk signal 539 is shifted in time andspace from AClk signal 520. As a result, the N_(S) memory componentswill each be sampling the address and control bus at slightly differentpoints in time.

FIG. 6 is a timing diagram illustrating timing of signals communicatedover the data bus (DQ_(S,M)) in accordance with an embodiment of theinvention. This bus is accompanied by two clock signals RClk_(S,M) andWClk_(S,M) which see essentially the same wire path as the bus. Thesubscripts (S,M) indicate the bus or clock signal at a particular moduleM and a particular slice S. The controller is defined to be module zero.The two clocks travel in opposite directions. WClk_(S,M) accompanies thewrite data which is transmitted by the controller and received by thememory components. RClk_(S,M) accompanies the read data which istransmitted by the memory components and received by the controller. Inthe example described, read data (denoted by “Q”) and write data(denoted by “D”) do not simultaneously occupy the data bus. Note that inother embodiments, this may not be the case where additional circuitryis provided to allow for additive signaling such that multiple waveformscarried over the same conductor can be distinguished and resolved.

The waveform of WClk clock signal 601 depicts the timing of the WClkclock signal at the memory controller component. Rising edge 602 occursat time 610 and is associated with write datum information Da 618, whichis present at slice one of module zero. Rising edge 607 occurs at time615, and is associated with write datum information Dd 621, which ispresent at slice one of module zero. Rising edge 608 occurs at time 616,and is associated with write datum De 622, which is present at slice oneof module zero.

The waveform of RClk clock signal 623 depicts the timing of the RClkclock signal at the memory controller component (at module zero). Risingedge 626 is associated with read datum information Qb 619, which ispresent at the memory controller component (at slice one of modulezero). Rising edge is associated with read datum information Qc 620,which is present at the memory controller component (at slice one ofmodule zero).

The waveform of WClk clock signal 632 depicts the timing of the WClkclock signal at the memory component at slice one of module one. Risingedge 635 is associated with write datum information Da 649, which ispresent at slice one of module one. Rising edge 645 is associated withwrite datum information Dd 652, which is present at slice one of moduleone. Rising edge 647 is associated with write datum information De 653,which is present at slice one of module one.

The waveform of RClk clock signal 654 depicts the timing of the RClkclock signal at the memory component of slice one of module one. Risingedge 658 is associated with read datum information Qb 650, which ispresent at slice one of module one. Rising edge 660 is associated withread datum information Qd 651, which is present at slice one of moduleone.

The clock signals are shown with a cycle time that corresponds tot_(CC). As previously mentioned, they could also have a shorter cycletime as long as the frequency and phase are constrained to allow thecontroller and memory components to generate the necessary timing pointsfor sampling and driving the information on the bus. Likewise, the busis shown with a single bit per wire. As previously mentioned, more thanone bit could be transferred in each t_(CC) interval since thecontroller and memory components are able to generate the necessarytiming points for sampling and driving the information on the bus. Notethat the actual drive point for the bus may have an offset from what isshown (relative to the rising and falling edges of the clock)—this willdepend upon the design of the transmit and receive circuits in thecontroller and memory components. In one embodiment, a fixed offset isused. An offset between the drive/sample points and the bit windowsshould be consistent between the driving component and the samplingcomponent.

It should be noted in FIG. 6 is that there is a delay t_(PD2) in theclock WClk_(S,M) and bus DQ_(S,M) (with the write data) as theypropagate from the controller to the slices of the first module. Thus,WClk clock signal 632 is shifted in time and space from WClk clocksignal 601. Also note that there is an approximately equal delay t_(PD2)in the clock RClk_(S,M) and bus DQ_(S,M) (with the read data) as theypropagate from the slices of the first module to the controller. Thus,RClk clock signal 623 is shifted in time and space from RClk clocksignal 654.

As a result, the controller and the memory components must have theirtransmit logic coordinated so that they do not attempt to drive writedata and read data at the same time. The example in FIG. 6 shows asequence in which there are write-read-read-write-write transfers. Itcan be seen that read-read and write-write transfers may be made insuccessive t_(CC) intervals, since the data in both intervals istraveling in the same direction. However, gaps (bubbles) are inserted atthe write-read and read-write transitions so that a driver only turns onwhen the data driven in the previous interval is no longer on the bus(it has been absorbed by the termination components at either end of thebus wires).

In FIG. 6, the read clock RClk_(S,M) and the write clock WClk_(S,M) arein phase at each memory component (however the relative phase of theseclocks at each memory component will be different from the other memorycomponents—this will be shown later when the overall system timing isdiscussed). Note that this choice of phase matching is one of severalpossible alternatives that could have been used. Some of the otheralternatives will be described later.

As a result of matching the read and write clocks at each memorycomponent (slice), the t_(CC) intervals with read data Qb 650 willappear to immediately follow the t_(CC) intervals with write data Da 649at the memory components (bottom of FIG. 6), but there will be a gap of2*t_(PD2) between the read data interval Qb 619 and write data intervalDa 618 at the controller (top of FIG. 6). There will be a second gap of(2*t_(CC)−2*t_(PD2)) between the read data Qc 620 and the write data Dd621 at the controller. There will be a gap of (2*t_(CC)) between theread data Qc 651 and the write data Dd 621. Note that the sum of thegaps at the memory components and the controller will be 2*t_(CC).

The overall system timing will be described next. The example systemphase aligns the AClk_(S,M), RClk_(S,M), and WClk_(S,M) clocks at eachmemory component (the slice number varies from one through N_(S), andthe module number is fixed at one). This has the benefit of allowingeach memory component to operate in a single clock domain, avoiding anydomain crossing issues. Because the address and control clock AClk_(S,M)flows past each memory component, the clock domain of each memory slicewill be offset slightly from the adjacent slices. The cost of thisphasing decision is that the controller must adjust the read and writeclocks for each slice to different phase values—this means there will be1+(2*N_(S)) clock domains in the controller, and crossing between thesedomains efficiently becomes very important. Other phase constraints arepossible and will be discussed later.

FIG. 7 is a timing diagram illustrating system timing at a memorycontroller component in accordance with an embodiment of the invention.As before, the controller sends a write-read-read-write sequence ofoperations on the control and address bus AClk_(S0,M1). The Da writedatum information is sent on the WClk_(S1,M0) and WClk_(SNs,M0) buses sothat it will preferably arrive at the memory component of each slice onecycle after the address and control information ACa. This is done bymaking the phase of the WClk_(S1,M0) clock generally equivalent to(t_(PD0)−t_(PD2)) relative to the phase of the AClk_(S0,M1) clock(positive means later, negative means earlier). This will cause them tobe in phase at the memory component of the first slice of the firstmodule Likewise, the phase of the WClk_(SNs,M0) clock is adjusted to begenerally equivalent to (t_(PD0)+t_(PD1)−t_(PD2)) relative to the phaseof the AClk_(S0,M1) clock. Note that some tolerance is preferably builtinto the system such that the phase adjustment of the clock toapproximate the propagation delays can vary slightly from the desiredadjustment while still allowing for successful system operation.

In a similar fashion, the phase of the RClk_(S1,M0) clock is adjusted tobe generally equivalent to (t_(PD0)+t_(PD2)) relative to the phase ofthe AClk_(S0,M1) clock. This will cause them to be in phase at thememory component of the last slice of the first module. Likewise, thephase of the RClk_(SNs,M0) clock is adjusted according to the expression(t_(PD0)+t_(PD1)+t_(PD2)) relative to the phase of the AClk_(S0,M1)clock to cause the RClk_(SNs,M0) clock and the AClk_(S0,M1) clock to bein phase at the memory component of the last slice of the first module.

The waveform of AClk clock signal 701 depicts the AClk clock signal atthe memory controller component, which is denoted as being at slicezero. Rising edge 702 occurs at time 710 and is associated with addressinformation ACa 718, which is present at slice zero. Rising edge 703occurs at time 711 and is associated with address information ACb 719,which is present at slice zero. Rising edge 704 occurs at time 712 andis associated with address information ACc 720, which is present atslice zero. Rising edge 707 occurs at time 715 and is associated withaddress information ACd 721, which is present at slice zero.

The waveform of WClk clock signal 722 depicts the WClk clock signal forthe memory component at slice one when that WClk clock signal is presentat the memory controller component at module zero. Rising edge 724occurs at time 711 and is associated with write datum information Da730, which is present. Rising edge 729 occurs at time 716 and isassociated with write datum information Dd 733, which is present.

The waveform of RClk clock signal 734 depicts the RClk clock signal forthe memory component of slice one when that RClk clock signal is presentat the memory controller component at module zero. Rising edge 737 isassociated with read datum information Qb 731, which is present. Risingedge 738 is associated with read datum information Qc 732, which ispresent.

The waveform of WClk clock signal 741 depicts the WClk clock signal forthe memory component at slice N_(S) when that WClk clock signal ispresent at the memory controller component at module zero. Write datuminformation Da 756 is associated with edge 744 of signal 741. Writedatum information Dd 759 is associated with edge 754 of signal 741.

The waveform of RClk clock signal 760 depicts the RClk clock signal forthe memory component at slice N_(S) when that RClk clock signal ispresent at the memory controller component at module zero. Read datuminformation Qb 757 is associated with edge 764 of signal 760. Read datuminformation Qc 758 is associated with edge 766 of signal 760.

FIG. 8 is a timing diagram illustrating alignment of clocksAClk_(S1,M1), WClk_(S1,M1), and RClk_(S1,M1) at the memory component inslice 1 of rank 1 in accordance with an embodiment of the invention. Allthree clocks are delayed by t_(PD0) relative to the AClk_(S0,M1) clockproduced at the controller.

The waveform of AClk clock signal 801 depicts the AClk clock signal forthe memory component at slice one of module one. Address information ACa822 is associated with edge 802 of signal 801. Address information ACb823 is associated with edge 804 of signal 801. Address information ACc824 is associated with edge 806 of signal 801. Address information ACd825 associated with edge 812 of signal 801.

The waveform of WClk clock signal 826 depicts the WClk clock signal forthe memory component at slice one of module one. Write datum informationDa 841 is associated with edge 829 of signal 826. Write datuminformation Dd 844 is associated with edge 839 of signal 826.

The waveform of RClk clock signal 845 depicts the RClk clock signal forthe memory component at slice one of module one. Read datum informationQb 842 is associated with edge 850 of signal 845. Read datum informationQc 843 is associated with edge 852 of signal 845.

FIG. 9 is a timing diagram illustrating alignment of clocksAClk_(SNs,M1), WClk_(SNs,M1), and RClk_(SNs,M1) at the memory componentin slice N_(S) of rank one of module one in accordance with anembodiment of the invention. All three clocks are delayed by(t_(PD0)+t_(PD1)) relative to the AClk_(S0,M1) clock produced at thecontroller.

The waveform of AClk clock signal 901 depicts the AClk clock signal forthe memory component at slice N_(S) at module one. Rising edge 902 ofsignal 901 is associated with address information ACa 917. Rising edge903 of signal 901 is associated with address information ACb. Risingedge 904 of signal 901 is associated with address information ACc 919.Rising edge 907 of signal 901 is associated with address information ACd920.

The waveform of WClk clock signal 921 depicts the WClk clock signal forthe memory component at slice N_(S) at module one. Rising edge 923 ofsignal 921 is associated with write datum information Da 937. Risingedge 928 of signal 921 is associated with write datum information Dd940.

The waveform RClk clock signal 929 depicts the RClk clock signal for thememory component at slice N_(S) at module one. Rising edge 932 of signal929 is associated with read datum information Qb 938. Rising edge 933 ofsignal 929 is associated with read datum information Qc 939.

Note that in both FIGS. 8 and 9 there is a one t_(CC) cycle delaybetween the address/control information (ACa 917 of FIG. 9, for example)and the read or write information that accompanies it (Da 937 of FIG. 9in this example) when viewed at each memory component. This may bedifferent for other technologies; i.e. there may be a longer accessdelay. In general, the access delay for the write operation at thememory component should be equal or approximately equal to the accessdelay for the read operation in order to maximize the utilization of thedata bus.

FIGS. 10 through 18 illustrate the details of an exemplary system whichuses address and data timing relationships which are nearly identical towhat has been described in FIGS. 5 through 9. In particular, all threeclocks are in-phase on each memory component. This example system hasseveral differences relative to this earlier description, however.First, two bits per wire are applied per t_(CC) interval on the AC bus(address/control bus, or simply address bus). Second, eight bits perwire are applied per t_(CC) interval on the DQ bus. Third, a clocksignal accompanies the AC bus, but the read and write clocks for the DQbus are synthesized from the clock for the AC bus.

FIG. 10 is a block diagram illustrating further details for one memoryrank (one or more slices of memory components) of a memory system suchas that illustrated in FIG. 1 in accordance with an embodiment of theinvention. The internal blocks of the memory components making up thisrank are connected to the external AC or DQ buses. The serialized dataon these external buses is converted to or from parallel form oninternal buses which connect to the memory core (the arrays of storagecells used to hold information for the system). Note that FIG. 10 showsall 32 bits of the DQ bus connecting to the memory rank—these 32 bitsare divided up into multiple, equal-sized slices and each slice of thebus is routed to one memory component. Thus, slices are defined based onportions of the DQ bus routed to separate memory components. The exampleshown in FIG. 10 illustrates a memory component, or device, thatsupports the entire set of 32 data bits for a particular example system.In other embodiments, such a system may include two memory devices,where each memory device supports half of the 32 data bits. Thus, eachof these memory devices would include the appropriate data transmitblocks, data receive blocks, and apportionment of memory core such thatthey can individually support the portion of the overall data bus forwhich they are responsible. Note that the number of data bits need notbe 32, but may be varied.

The AClk signal is the clock which accompanies the AC bus. It isreceived and is used as a frequency and phase reference for all theclock signals generated by the memory component. The other clocks areClkM2, ClkM8, and ClkM. These are, respectively, 2×, 8×, and 1× thefrequency of AClk. The rising edges of all clocks are aligned (no phaseoffset). The frequency and phase adjustment is typically done with sometype of phase-locked-loop (PLL) circuit, although other techniques arealso possible. A variety of different suitable PLL circuits are wellknown in the art. The feedback loop includes the skew of the clockdrivers needed to distribute the various clocks to the receive andtransmit blocks as well as the memory core. The memory core is assumedto operate in the ClkM domain.

Memory component 116 comprises memory core 1001, PLL 1002, PLL 1003, andPLL 1004. AClk clock signal 109 is received by buffer 1015, whichprovides clock signal 1019 to PLLs 1002, 1003, and 1004. Various PLLdesigns are well known in the art, however some PLLs implemented in theexample embodiments described herein require minor customization toallow for the specific functionality desired. Therefore, in someembodiments described herein, the particular operation of the variousblocks within the PLL are described in additional detail. Thus, althoughsome of the PLL constructs included in the example embodiments describedherein are not described in extreme detail, it is apparent to one ofordinary skill in the art that the general objectives to be achieved bysuch PLLs are readily recognizable through a variety of circuits wellknown to those skilled in the art. PLL 1002 includes phase comparatorand voltage controlled oscillator (VCO) 1005. PLL 1002 provides clocksignal ClkM 1024 to memory core 1001, address/control receive block 204,data receive block 205, and data transmit block 206.

PLL 1003 comprises prescaler 1009, phase comparator and VCO 1010, anddivider 1011. Prescaler 1009 may be implemented as a frequency divider(such as that used to implement divider 1011) and provides acompensating delay with no frequency division necessary. Prescaler 1009provides a signal 1021 to phase comparator and VCO 1010. The phasecomparator in VCO 1010 is represented as a triangle having two inputsand an output. The functionality of the phase comparator 1010 ispreferably configured such that it produces an output signal thatensures that the phase of the feedback signal 1023, which is one of itsinputs, is generally phase aligned with a reference signal 1021. Thisconvention is preferably applicable to similar structures included inother PLLs described herein. Divider 1011 provides a feedback signal1023 to phase comparator and VCO 1010. PLL 1003 provides clock signalClkM2 1025 to address/control receive block 204.

PLL 1004 comprises prescaler 1006, phase comparator and VCO 1007, anddivider 1008. Prescaler 1006 may be implemented as a frequency divider(such as that used to implement divider 1011) and provides acompensating delay with no frequency division necessary. Prescaler 1006provides a signal 1020 to phase comparator and VCO 1007. Divider 1008provides a feedback signal 1022 to phase comparator and VCO 1007. PLL1004 provides clock signal ClkM8 1026 to data receive block 205 and datatransmit block 206.

The address bus 107 is coupled via buffers 1012 to address/controlreceive block 204 via coupling 1016. The data outputs 1018 of datatransmit block 206 are coupled to data bus 108 via buffers 1014. Thedata bus 108 is coupled to data inputs 1017 of data receive block 205via buffers 1013.

Address/control receive block 204 provides address information to thememory core 1001 via internal address bus 1027. Data receive blocks 205provides write data to memory core 1001 via internal write data bus1028. Memory core 1001 provides read data to data transmit blocks 206via internal read data bus 1029.

FIG. 11 is a block diagram illustrating logic used in the receive andtransmit blocks of FIG. 10 in accordance with an embodiment of theinvention. In this Figure, for clarity, the elements for only one bit ofeach bus are illustrated. It is understood that such elements may bereplicated for each bit of the bus.

Address/control receive block 204 comprises registers 1101, 1102, and1103. Address bus conductor 1016 is coupled to registers 1101 and 1102,which together form a shift register, and which are clocked by ClkM2clock signal 1025 and coupled to register 1103 via couplings 1104 and1105, respectively. Register 1103 is clocked by ClkM clock signal 1024and provides address/control information to internal address bus 1027.The representation of registers 1101 and 1102 in FIG. 11 is preferablyunderstood to imply that they form a shift register such that dataentering register 1101 during one cycle is transferred into register1102 during the subsequent cycle as new data enters register 1101. Inthe particular embodiment shown in FIG. 11, the movement of data iscontrolled by the clock signal ClkM2 1025. Thus, if clock ClkM2 1025operates at twice the frequency of clock ClkM 1024, the receive block204 generally operates as a serial-to-parallel shift register, where twoconsecutive serial bits are grouped together in a two-bit parallelformat before being output onto signal lines RAC 1027. Thus, othersimilar representations in the figures where a number of registers aregrouped together in a similar configuration preferably are understood toinclude the interconnections required to allow data to be seriallyshifted along the path formed by the registers. Examples include theregisters 1123-1130 included in transmit block 206 and the registers1106-1113 included in receive block 205. As a result, the serialinformation on the input 1016 is converted to parallel form on theoutput 1027.

Data receive block 205 comprises registers 1106, 1107, 1108, 1109, 1110,1111, 1112, 1113, and 1114. Data input 1017 is coupled to registers1106, 1107, 1108, 1109, 1110, 1111, 1112, and 1113, which are clocked byClkM8 clock signal 1026 and coupled to register 1114 via couplings 1115,1116, 1117, 1118, 1119, 1120, 1121, and 1122, respectively. Register1114 is clocked by ClkM clock signal 1024 and provides write data tointernal write data bus 1028. As a result, the serial information on theinput 1017 is converted to parallel form on the output 1028.

Data transmit block 206 comprises registers 1123, 1124, 1125, 1126,1127, 1128, 1129, 1130, and 1131. Read data from internal read data bus1029 is provided to register 1131, which is clocked by ClkM clock 1024and coupled to registers 1123, 1124, 1125, 1126, 1127, 1128, 1129, and1130 via couplings 1132, 1133, 1134, 1135, 1136, 1137, 1138, and 1139.Registers 1123, 1124, 1125, 1126, 1127, 1128, 1129, and 1130 are clockedby ClkM8 clock 1026 and provide data output 1018. As a result, theparallel information on the input 1029 is converted to serial form onthe output 1018.

Shown are the register elements needed to sample the address/control andwrite data, and to drive the read data. It is assumed in this examplethat two bits are transferred per address/control (AC[i]) wire in eacht_(CC) interval, and that eight bits are transferred per read data(Q[i]) wire or write data (D[i]) wire in each t_(CC) interval. Inaddition to the primary clock ClkM (with a cycle time of t_(CC)), thereare two other aligned clocks that are generated. There is ClkM2 (with acycle time of t_(CC)/2) and ClkM8 (with a cycle time of t_(CC)/8). Thesehigher frequency clocks shift information in to or out from the memorycomponent. Once in each t_(CC) interval the serial data is transferredto or from a parallel register clocked by ClkM.

Note that ClkM2 and ClkM8 clocks are frequency locked and phase lockedto the ClkM clock. The exact phase alignment of the two higher frequencyclocks will depend upon the circuit implementation of the driver andsampler logic. There may be small offsets to account for driver orsampler delay. There may also be small offsets to account for the exactposition of the bit valid windows on the AC and DQ buses relative to theClkM clock.

Note also that in the memory component, the ClkM2 or ClkM8 clocks couldbe replaced by two or eight clocks each with a cycle time of t_(CC), butoffset in phase in equal increments across the entire t_(CC) interval.The serial register, which in transmit block 204 includes registers1101-1102, in transmit block 206 includes registers 1123-1130, and indata receive block 205 includes registers 1106-1113, would be replacedby a block of two or eight registers, each register loaded with adifferent clock signal so that the bit windows on the AC and DQ busesare properly sampled or driven. For example, in the transmit block 204,two individual registers would be included, where one register isclocked by a first clock signal having a particular phase and the secondregister is clocked by a different clock signal having a differentphase, where the phase relationship between these two clock signals isunderstood such that the equivalent serial-to-parallel conversion can beachieved as that described in detail above. Another possibility is touse level-sensitive storage elements (latches) instead of edge sensitivestorage elements (registers) so that the rising and falling edges of aclock signal cause different storage elements to be loaded.

Regardless of how the serialization is implemented, there are multiplebit windows per t_(CC) interval on each wire, and multiple clock edgesper t_(CC) interval are created in the memory component in order toproperly drive and sample these bit windows.

FIG. 12 is a block diagram illustrating details for the memorycontroller component of a memory system such as that illustrated in FIG.1 in accordance with an embodiment of the invention. The memorycontroller component 102 comprises PLLs 1202, 1203, 1204, and 1205,address/control transmit blocks 201, data transmit blocks 202, datareceive blocks 203, and controller logic core 1234. PLL 1202 comprisesphase comparator and VCO 1206. PLL 1202 receives ClkIn clock signal 1201and provides ClkC clock signal 1215 to controller logic core 1234 and tobuffer 1224, which outputs AClk clock signal 109.

PLL 1203 comprises prescaler 1207, phase comparator and VCO 1208, anddivider 1209. Prescaler 1207 may be implemented as a frequency dividerand provides a compensating delay with no frequency division necessary.Prescaler 1207 receives ClkIn clock signal 1201 and provides signal 1216to phase comparator and VCO 1208. Divider 1209 provides feedback signal1218 to phase comparator and VCO 1208, which provides ClkC2 clock output1217 to address/control transmit blocks 201.

PLL 1204 comprises phase comparator and VCO 1210, dummy phase offsetselector 1212, and divider 1211. Dummy phase offset selector 1212inserts an amount of delay to mimic the delay inherent in a phase offsetselector and provides signal 1220 to divider 1211, which providesfeedback signal 1221 to phase comparator and VCO 1210. Phase comparatorand VCO 1210 receives ClkIn clock input 1201 and provides ClkC8 clockoutput 1219 to data transmit blocks 202 and data receive blocks 203.

PLL 1205 comprises phase shifting circuit 1214 and phase comparator andVCO 1213. Phase shifting circuit 1214 provides feedback signal 1223 tophase comparator and VCO 1213. Phase comparator and VCO 1213 receivesClkIn clock signal 1201 and provides ClkCD clock signal 1222 to datatransmit blocks 202 and data receive blocks 203.

Controller logic core 1234 provides TPhShB signals 1235 and TPhShAsignals 1236 to data transmit blocks 202. Controller logic core 1234provides RPhShB signals 1237 and RPhShA signals 1238 to data receiveblocks 203. Controller logic core 1234 provides LoadSkip signal 1239 todata transmit blocks 202 and data receive blocks 203. Controller logiccore 1234 comprises PhShC block 1240. Functionality of the controllerlogic 1234 is discussed in additional detail with respect to FIG. 17below.

Controller logic core 1234 provides address/control information toaddress/control transmit blocks 201 via internal address bus 1231.Controller logic core 1234 provides write data to data transmit blocks1232 via internal write data bus 1232. Controller logic core 1234receives read data from data receive blocks 203 via internal read databus 1233.

Address/control transmit blocks 201 are coupled via output 1228 tobuffers 1225, which drive AC bus 107. Data transmit blocks 202 provideoutputs 1229 to buffers 1226, which drive DQ bus 108. Buffers 1227couple DQ bus 108 to inputs 1230 of data receive blocks 203.

Each of address/control transmit blocks 201 is connected to the AC bus,and each of blocks 202 and 203 is connected to the DQ bus. Theserialized data on these external buses is converted to or from parallelfrom internal buses which connect to the rest of the controller logic.The rest of the controller is assumed to operate in the ClkC clockdomain.

In the embodiment shown, the ClkIn signal is the master clock for thewhole memory subsystem. It is received and used as a frequency and phasereference for all the clock signals used by the controller. The otherclocks are ClkC2, ClkC8, ClkC, and ClkCD. These are, respectively, 2×,8×, 1×, and 1× the frequency of ClkIn. ClkC will have no phase offsetrelative to ClkIn, and ClkCD will be delayed by 90 degrees. ClkC2 hasevery other rising edge aligned with a rising edge of ClkIn.

Every eighth ClkC8 rising edge is aligned with a rising edge of ClkInexcept for an offset which compensates for the delay of a frequencydivider and phase offset selector in the transmit and receive blocks.There are “N” additional ClkC8 signals (ClkC8[N:1]) which arephase-shifted relative to the ClkC8 signal. These other ClkC8 phases areused to synthesize the transmit and receive clock domains needed tocommunicate with the memory components.

The frequency and phase adjustment is typically done with some type ofphase-locked-loop (PLL) circuit, although other techniques are alsopossible. The feedback loop of the PLL circuit includes the skew of theclock drivers needed to distribute the various clocks to the receive andtransmit blocks as well as the rest of the controller logic.

FIG. 13 is a block diagram illustrating the logic used in the receiveand transmit blocks of FIG. 12 in accordance with an embodiment of theinvention. Memory controller component 102 comprises address/controltransmit blocks 201, data transmit blocks 202, and data receive blocks203. For clarity, the elements for only one bit are illustrated. It isunderstood that such elements may be replicated for each bit of thebuses.

Address/control transmit blocks 201 comprise register 1301 and registers1302 and 1303. Internal address bus 1231 is coupled to register 1301,which is clocked by ClkC clock 1215 and provides outputs to registers1302 and 1303 via couplings 1304 and 1305, respectively. Registers 1302and 1303 are clocked by ClkC2 clock 1217 and provide output 1328 to theAC bus. As a result, the parallel information on the internal addressbus 1231 is converted to serial form on the output 1228. Additionalfunctional description of the address/control transmit blocks 201 isprovided with respect to FIG. 13 below.

Generally, the data transmit blocks 202 and data receive blocks 203shown in FIG. 13 serve the function of performing serial-to-parallel orparallel-to-serial conversion of data (the type of conversion dependingupon the direction of the data flow). Such blocks are similar to thosepresent within the memory devices, however in the case of the transmitand receive blocks included in the controller in this particular system,additional circuitry is required in order to obtain the appropriateclocking signals required to perform these serial-to-parallel andparallel-to-serial conversions. In the memory devices of this example,such clock adjustment circuitry is not required, as the clocks areunderstood to be phase aligned within the memory devices. However,within the controller such phase alignment cannot be guaranteed due tothe assumption within the system that phase alignment within the memorydevices will possibly cause phase mismatching in other portions of thesystem due to the physical positioning of the memory devices withrespect to the controller. Thus, a memory device positioned a firstdistance from the controller will have a different set of characteristicdelays with respect to signals communicated with the controller than asecond memory device positioned at a second position. As such,individual clock adjustment circuitry would be required for such memorydevices within the controller such that the controller is assured ofproperly capturing read data provided by each of the memory devices andto allow for the controller to properly drive write data intended to bereceived by each of the memory devices.

Within the transmit block 202, data for transmission is received overthe TD bus 1232 in parallel format. This data is loaded into theregister 1310 based on the clock ClkC signal 1215. Once loaded in theregister 1310, the data is either directly passed through themultiplexer 1312 to the register 1313 or caused to be delayed by a halfclock cycle by traversing the path through the multiplexer 1312 thatincludes the register 1311 which is clocked by the falling edge of theClkC signal. Such circuitry enables the data on the TD bus, which is inthe ClkC clock domain, to be successfully transferred into the clockdomain needed for its transmission. This clock domain is the TClkC1Bclock domain, which has the same frequency as the ClkC clock, but is notnecessarily phase aligned to the ClkC clock signal. Similar circuitry isincluded within the receive block 203 such that data received in theRClkC1B clock domain can be successfully transferred onto the RQ busthat operates in the ClkC clock domain.

Data transmit blocks 202 comprise PhShA block 1306, clock dividercircuit 1307, registers 1308, 1309, 1310, 1311, and 1313, multiplexer1312, and shift register 1314. TPhShA signals 1236 and ClkC8 clocksignals 1219 are provided to PhShA block 1306. Additional detailregarding the PhShA block 1306 are provided with respect to FIG. 15below. Clock divider circuit 1307 comprises 1/1 divider circuit 1324 and1/8 divider circuit 1325. TPhShB signals 1235 are provided to 1/8divider circuit 1325. An output of PhShA block 1306 is provided toinputs of 1/1 divider circuit 1324 and 1/8 divider circuit 1325. Anoutput of 1/1 divider circuit 1324 is provided to clock shift register1314. An output of 1/8 divider circuit 1325 is provided to clockregister 1313 and as an input to register 1308.

Register 1308 is clocked by ClkCD clock signal 1222 and provides anoutput to register 1309. Register 1309 is clocked by ClkC clock signal1215 and receives LoadSkip signal 1238 to provide an output tomultiplexer 1312 and an output to clock registers 1310 and 1311.Register 1310 receives write data from write data bus 1232 and providesan output to register 1311 and multiplexer 1312. Register 1311 providesan output to multiplexer 1312. Multiplexer 1312 provides an output toregister 1313. Register 1313 provides parallel outputs to shift register1314. Shift register 1314 provides output 1229. As a result, theparallel information on the input 1232 is converted to serial form onthe output 1229.

Data receive blocks 203 comprise PhShA block 1315, clock dividingcircuit 1316, registers 1317, 1318, 1320, 1321, and 1323, shift register1319, and multiplexer 1322. Clock dividing circuit 1316 comprises 1/1divider circuit 1326 and 1/8 divider circuit 1327. RPhShA signals 1238and ClkC8 clock signal 1219 are provided to PhShA block 1315, whichprovides an output to 1/1 divider circuit 1326 and 1/8 divider circuit1327. RPhShB signal 1237 is provided to an input of 1/8 divider circuit1327. The 1/1 divider circuit 1326 provides an output used to clockshift register 1319. The 1/8 divider circuit 1327 provides an outputused to clock register 1320 and used as an input to register 1317.Register 1317 is clocked by ClkCD clock signal 1222 and provides anoutput to register 1318. Register 1318 receives LoadSkip signal 1238 andis clocked by ClkC clock signal 1215, providing an output to multiplexer1322 and an output used to clock registers 1321 and 1323.

Shift register 1319 receives input 1230 and provides parallel outputs toregister 1320. Register 1320 provides an output to register 1321 and tomultiplexer 1322. Register 1321 provides an output to multiplexer 1322.Multiplexer 1322 provides an output to register 1323. Register 1323provides an output to internal read data bus 1233. As a result, theserial information on the input 1230 is converted to parallel form onthe output 1233.

Shown are the register and gating elements needed to driveaddress/control and write data, and to sample the read data. It isassumed in this example that two bits are transferred peraddress/control (AC[i]) wire in each t_(CC) interval, and that eightbits are transferred per read data (Q[i]) wire or write data (D[i]) wirein each t_(CC) interval. In addition to the primary clock ClkC (with acycle time of t_(CC)), there are two other aligned clocks that aregenerated. There is ClkC2 (with a cycle time of t_(CC)/2) and ClkC8(with a cycle time of t_(CC)/8). These higher frequency clocks shiftinformation in to or out from the controller. Once in every t_(CC)interval the serial data is transferred to or from a parallel registerclocked by ClkC.

Note that in the controller, the ClkC2 or ClkC8 clocks can be replacedby two or eight clocks each with a cycle time of t_(CC), but offset inphase in equal increments across the entire t_(CC) interval. In suchembodiments, the serial register is replaced by blocks of two or eightregisters, where each register is loaded with a different clock signalso that the bit windows on the AC and DQ buses are properly sampled ordriven. Another possibility is to use level-sensitive storage elements(latches) instead of edge sensitive storage elements (registers) so thatthe rising and falling edges of a clock signal cause different storageelements to be loaded.

Regardless of how the serialization is implemented, there will bemultiple bit windows per t_(CC) interval on each wire, and manyembodiments utilize multiple clock edges per t_(CC) interval in thecontroller in order to properly drive and sample these bit windows.

FIG. 13 also shows how the controller deals with the fact that the readand write data that is received and transmitted for each slice is in adifferent clock domain. Since a slice may be as narrow as a single bit,there can be 32 read clock domains and 32 write clock domainssimultaneously present in the controller (this example assumes a DQ buswidth of 32 bits). Remember that in this example no clocks aretransferred with the read and write data, and such clocks are preferablysynthesized from a frequency source. The problem of multiple clockdomains would still be present even if a clock was transferred with theread and write data. This is because the memory component is the pointin the system where all local clocks are preferably in-phase. Othersystem clocking topologies are described later in this description.

The transmit block for address/control bus (AC) in FIG. 13 uses theClkC2 and ClkC clocks to perform two-to-one serialization. The ClkC2clock shifts the serial register 1302, 1304 onto the AC wires 1328. Notethe exact phase alignment of the ClkC2 clock depends upon the circuitimplementation of the driver logic; there may be a small offset toaccount for driver delay. There may also be small offsets to account forthe exact position of the bit drive window on the AC bus relative to theClkC clock. For example, if the output drivers have a known delay, thephase of the ClkC2 clock signal may be adjusted such that a portion ofthe output circuitry begins providing data to the output driversslightly earlier than the time at which the data is to actually bedriven onto an external signal line. The shifting of the phase of theClkC2 clock signal can thus be used to account for the inherent delay inthe output driver such that data is actually presented on the externaldata line at the desired time. Similarly, adjustments to the phase ofthe ClkC2 clock signal may also be used to ensure that the positioningof the valid data window for data driven based on the ClkC2 clock signalis optimally placed.

In a similar fashion, the transmit block for write data bus (D) in FIG.13 uses a phase-delayed ClkC8 clock to perform eight-to-oneserialization. The phase-delayed ClkC8 clock shifts the serial register1314 onto the DQ wires. Note the exact alignment of the phase-delayedClkC8 clock will depend upon the circuit implementation of the driverlogic; there may be a small offset to account for driver delay. Theremay also be small offsets to account for the exact position of the bitdrive window on the DQ bus.

The TphShA[i][n:0] control signals 1236 select the appropriate phaseoffset relative to the input reference vectors ClkC8[N:1]. A phaseoffset selector may be implemented using a simple multiplexer, a moreelaborate phase interpolator, or other phase offset selectiontechniques. In one example of a phase interpolator, a first referencevector of less-than-desired phase offset and a second reference vectorof greater-than-desired phase offset are selected. A weighting value isapplied to combine a portion of the first reference vector with aportion of the second reference vector to yield the desired output phaseoffset of the TClkC8A clock. Thus, the desired output phase offset ofthe TClkC8A clock is effectively interpolated from the first and secondreference vectors. In one example of a phase multiplexer, theTphShA[i][n:0] control signals 1236 are used to select one of theClkC8[N:1] clock signals 1219 to pass through to the TClkC8A clock (notethat 2^(n+1)=N). The phase that is used is, in general, different foreach transmit slice on the controller. The phase for each slice on thecontroller is preferably selected during a calibration process duringinitialization. This process is described in detail later in thisdescription.

The TClkC8A clock passes through 1/8 1325 and 1/1 1324 frequencydividers before clocking the parallel 1313 and serial 1314 registers.Note that the ClkC8[N:1] signals that are distributed have a small phaseoffset to compensate for the delay of the phase offset selection block(PhShA) 1306 and the frequency divider blocks 1324 and 1325. This offsetis generated by a phase-locked-loop circuit and will track out supplyvoltage and temperature variations.

Even with the transmit phase shift value set correctly (so that the bitwindows on the D bus 1229 are driven properly), the phase of the TClkC1Bclock used for the parallel register 1313 could be misaligned (there areeight possible combinations of phase). There are several ways of dealingwith the problem. The scheme that is used in the embodiment illustratedprovides an input TPhShB 1235, such that when this input is pulsed, thephase of the TClkC1B clock will shift by ⅛^(th) of a cycle (45 degrees).The initialization software adjusts the phase of this clock until theparallel register loads the serial register at the proper time. Thisinitialization process is described in detail later in this description.

Alternatively, it is also possible to perform the phase adjustment inthe ClkC domain when preparing the TD bus 1232 for loading into thetransmit block 202. To do so, multiplexers and registers may be used torotate the write data across ClkC cycle boundaries. A calibrationprocess may be provided at initialization to accommodate the phase ofthe TClkC1B clock during which the transmit block 202 is powered up.

After the phase shift controls are properly adjusted, the write data canbe transmitted onto the D bus from the parallel register 1313. However,the write data still needs to be transferred from the TD bus 1232 in theClkC 1215 domain into the parallel register 1313 in the TClkC1B domain.This is accomplished with the skip multiplexer 1312. The multiplexerselects between registers that are clocked on the rising 1310 andfalling 1311 edges of ClkC. The SkipT value determines which of themultiplexer paths is selected. The SkipT value is determined by samplingthe TClkC1B clock by the ClkCD clock 1222. The resulting value is loadedinto a register 1309 by the LoadSkip signal 1238 during theinitialization routine. This circuitry is described in detail later inthis description.

The receive block 203 for the read data Q is shown at the bottom of FIG.13. The receive block has essentially the same elements as the transmitblock that was just discussed, except that the flow of data is reversed.However, the clock domain crossing issues are fundamentally similar.

The RPhShA[i][n:0] control signals 1238 select one of the ClkC8[N:1]clock signals 1219 to pass through to the RClkC8 clock. The phase thatis used is, in general, different for each receive slice on thecontroller. The phase is selected during a calibration process duringinitialization. This process is described in detail later in thisdescription.

The RClkC8A clock passes through 1/8 1327 and 1/1 1326 frequencydividers before clocking the parallel 1320 and serial 1319 registers.Note that the ClkC8[N:1] signals 1219 that are distributed have a smallphase offset to compensate for the delay of the phase offset selectionblock (PhShA) 1315 and the frequency divider blocks 1326 and 1327. Thisoffset is generated by a phase-locked-loop circuit and will track outsupply voltage and temperature variations.

Even with the receive phase shift value set correctly (so that the bitwindows on the Q bus are sampled properly), the phase of the RClkC1Bclock used for the parallel register 1320 could be mismatched (there areeight possible combinations of phase). There are several ways of dealingwith the problem. The scheme that is used in the embodiment illustratedprovides an input RPhShB 1237, such that when this input is pulsed, thephase of the RClkC1B clock will shift by ⅛^(th) of a cycle (45 degrees).The initialization software adjusts the phase of this clock until theparallel register 1320 loads the serial register 1319 at the propertime. This initialization process is described in detail later in thisdescription.

A skip multiplexer similar to that described for the transmit circuit isused to move between the RClkC1B clock domain and the ClkC clock domain.After the phase shift controls are properly adjusted, the read data canbe received from the Q bus 1230 and loaded into the parallel register1320. However, the read data still needs to be transferred from theparallel register 1320 in the RClkC1B domain into the register 1323 inthe ClkC 1215 domain. This is accomplished with the skip multiplexer1322. The multiplexer can insert or not insert a register 1321 that isclocked on the negative edge of ClkC in between registers that areclocked on the rising edges of RClkC1B 1320 and ClkC 1323. The SkipRvalue determines which of the multiplexer paths is selected. The SkipRvalue is determined by sampling the RClkC1B clock by the ClkCD clock1222. The resulting value is loaded into a register 1318 by the LoadSkipsignal 1238 during the initialization routine. This circuitry isdescribed in detail later in this description.

FIG. 14 is a logic diagram illustrating details of the PLL used togenerate the ClkC8 signal as illustrated in FIG. 12 in accordance withan embodiment of the invention. PLL 1204 comprises PLL circuit 1401,adjustable matched delays 1402, matched buffers 1403, and phasecomparator 1404. PLL circuit 1401 comprises VCO 1405, dummy phase offsetselector 1406, frequency divider 1407, and phase comparator 1408. ClkInclock signal 1201 is provided to VCO 1405 and phase comparator 1408. VCO1405 provides an output to adjustable matched delays 1402 and matchedbuffers 1403. Adjustable matched delays 1402 provide a plurality ofincrementally delayed outputs to matched buffers 1403.

The PLL circuit 1401 generates a clock signal that is 8 times thefrequency of the input clock signal ClkIn 1201, and the generated signalis also phase-shifted to account for delay expected to exist in thepaths of the clock signals produced by the circuit in FIG. 14. As such,expected delays are compensated for during the clock generation processsuch that the clock signals that appear at the point of actual use arecorrectly phase adjusted. The remaining portion of the block 1204outside of the PLL circuit 1401 is used to generate equally phase-spacedversions of the clock produced by the PLL circuit 1401. This isaccomplished through well-known delay locked loop techniques where thedelay locked loop provides the mechanism for generating the equallyspaced clock signals. The clock signals produced as a result of theblock 1204 in FIG. 14 are provided to the phase shifting logic describedbelow with respect to FIG. 15. The results of the clock generationperformed by the circuits of FIGS. 14 and 15 are used to perform theserial-to-parallel or parallel-to-serial conversion as described in FIG.13 above.

Output 1409 of matched buffers 1403, which is not delayed by adjustablematched delays 1402, is provided to an input of dummy phase offsetselector 1406 and an input of phase comparator 1404 and provides theClkC8 clock signal. Delayed output 1410 provides the ClkC8₁ clocksignal. Delayed output 1411 provides the ClkC8₂ clock signal. Delayedoutput 1412 provides the ClkC8₃ clock signal. Delayed output 1413provides the ClkC8_(N-1) clock signal. Delayed output 1414 provides theClkC8_(N) clock signal, which is provided to an input of phasecomparator 1404. Phase comparator 1404 provides a feedback signal toadjustable matched delays 1402, thereby providing a delay-locked loop(DLL). Each of the matched buffers 1403 has a substantially similarpropagation delay, thereby providing a buffered output withoutintroducing unintended timing skew among output 1409 and delayed outputs1410-1414.

The ClkIn reference clock 1201 is received and is frequency-multipliedby 8× by the PLL 1204. Several delays are included with the PLL feedbackloop of PLL 1204, including a buffer delay introduced by matched buffers1403, a dummy phase offset selection delay introduced by dummy phaseoffset selector 1406, and a frequency divider delay introduced byfrequency divider 1407. By including these delays in the feedback loop,the clock that is used for sampling and driving bits on the DQ will bematched to the ClkIn reference, and any delay variations caused by slowdrift of temperature and supply voltage will be tracked out.

The output of the PLL circuit 1401 is then passed through a delay line1402 with N taps. The delay of each element is identical, and can beadjusted over an appropriate range so that the total delay of N elementscan equal one ClkC8 cycle (t_(CC)/8). There is a feedback loop 1404 thatcompares the phase of the undelayed ClkC8 to the clock with maximumdelay ClkC8[N]. The delay elements are adjusted until their signals arephase aligned, meaning there is t_(CC)/8 of delay across the entiredelay line.

The ClkC8[N:1] signals pass through identical buffers 1403 and seeidentical loads from the transmit and receive slices to which theyconnect. The ClkC8 reference signal 1409 also has a buffer and a matcheddummy load to mimic the delay.

FIG. 15 is a block diagram illustrating how the ClkC8[N:1] signals areused in the transmit and receive blocks of the memory controllercomponent such as that illustrated in FIG. 13 in accordance with anembodiment of the invention. PhShA logic block 1501 comprises phaseoffset selection circuit 1502, which comprises phase offset selector1503. Phase offset selector 1503 receives ClkC8₁ clock signal 1410,ClkC8₂ clock signal 1411, ClkC8₃ clock signal 1412, ClkC8_(N-1) clocksignal 1413, and ClkC8_(N) clock signal 1414 (i.e., N variants of theClkC8 clock signal) and selects and provides ClkC8A clock signal 1504.This is accomplished using the N-to-1 multiplexer 1503 which selects oneof the signals depending upon the setting of the control signalsPhShA[i][n:0], where N=2^(n+1). This allows the phase of the ClkC8Aoutput clock for slice [i] to be varied across one ClkC8 cycle(t_(CC)/8) in increments of t_(CC)/8N.

At initialization, a calibration procedure is performed with softwareand/or hardware in which test bits are sampled and driven under eachcombination of the control signals PhShA[i][n:0]. The combination whichyields the best margin is selected for each slice. This static valuecompensates for the flight time of the DQ and AC signals between thecontroller and the memory components. This flight time is mainly afactor of trace length and propagation velocity on printed wiringboards, and does not vary much during system operation. Other delayvariations due to supply voltage and temperature are automaticallytracked out by the feedback loops of the PLLs in the system.

FIG. 16 is a block diagram illustrating the PhShB circuit 1307 and 1316of FIG. 13. Clock conversion circuit 1601 of FIG. 16 preferablycorresponds to 1/1 divider circuit 1324 and 1/1 divider circuit 1326 ofFIG. 13. Similarly, clock conversion circuit 1602 of FIG. 16 preferablycorresponds to 1/8 divider circuit 1325 and 1/8 divider circuit 1327 ofFIG. 13. It produces a ClkC8B clock and a ClkC1B clock based on theClkC8A clock in accordance with an embodiment of the invention. Clockconversion circuit 1601 comprises a multiplexer 1603, which receivesClkC8A signal 1504 and provides ClkC8B signal 1604. Clock conversioncircuit 1602 comprises registers 1605, 1606, 1607, and 1612, logic gate1608, multiplexer 1611, and incrementing circuits 1609 and 1610. PhShBsignal 1614 is applied to register 1605, and ClkC8A clock signal 1504 isused to clock register 1605. Outputs of register 1605 are applied as aninput and a clock input to register 1606. An output of register 1606 isapplied as an input to register 1607 and logic gate 1608. An output ofregister 1606 is used to clock register 1607. An output of register 1607is applied to logic gate 1608. An output of register 1607 is used toclock register 1612. An output of logic gate 1608 is applied tomultiplexer 1611.

Incrementing circuit 1609 increments an incoming three-bit value by two.Incrementing circuit 1610 increments the incoming three-bit value by onein a binary manner such that it wraps from 111 to 000. Multiplexer 1611selects among the three-bit outputs of incrementing circuits 1609 and1610 and provides a three-bit output to register 1612. Register 1612provides a three-bit output to be used as the incoming three-bit valuefor incrementing circuits 1609 and 1610. The most significant bit (MSB)of the three-bit output is used to provide ClkC1B clock signal 1613.

In FIG. 16, the ClkC8A clock that is produced by the PhShA (1306 and1315 of FIG. 13) block is then used to produce a ClkC8B clock at thesame frequency and to produce a ClkC1B clock at ⅛^(th) the frequency.These two clocks are phase aligned with one another (each rising edge ofClkC1B is aligned with a rising edge of ClkC8B.

ClkC1B 1613 is produced by passing it through a divide-by-eight counter1602. ClkC8A clocks a three bit register 1612 which increments on eachclock edge. The most-significant bit will be ClkC1B, which is ⅛^(th) thefrequency of ClkC8A. The ClkC8B 1604 clock is produced by a multiplexerwhich mimics the clock-to-output delay of the three bit register, sothat ClkC1B and ClkC8B are aligned. As is apparent to one of ordinaryskill in the art, other delaying means can be used in place of themultiplexer shown in block 1601 to accomplish the task of matching thedelay through the divide-by-8 counter.

As described with respect to FIG. 13, it is necessary to adjust thephase of ClkC1B 1613 so that the parallel register is loaded from/to theserial register in the transmit and receive blocks at the proper time.At initialization, a calibration procedure will transmit and receivetest bits to determine the proper phasing of the ClkC1B clock. Thisprocedure will use the PhShB control input 1614. When this input has arising edge, the three bit counter will increment by +2 instead of +1 onone of the following ClkC8A edges (after synchronization). The phase ofthe ClkC1B clock will shift ⅛^(th) of a cycle earlier. The calibrationprocedure will continue to advance the phase of the ClkC1B clock andcheck the position of test bits on the TD[i][7:0] and RQ[i][7:0] buses.When the test bits are in the proper position, the ClkC1B phase will befrozen.

FIG. 17 is a block diagram illustrating details of the PhShC block (1240in FIG. 12) in accordance with an embodiment of the invention. PhShCblock 1240 includes blocks 1701-1704. Block 1701 comprises register 1705and multiplexer 1706. Write data input 1714 is provided to register 1705and multiplexer 1706. Register 1705 is clocked by ClkC clock signal 1215and provides an output to multiplexer 1706. Multiplexer 1706 receivesTPhShC[0] selection input 1713 and provides write data output 1715.Block 1702 comprises register 1707 and multiplexer 1708. Read data input1717 is provided to register 1707 and multiplexer 1708. Register 1707 isclocked by ClkC clock signal 1215 and provides an output to multiplexer1708. Multiplexer 1708 receives RPhShC[0] selection input 1716 andprovides read data output 1718. Block 1703 comprises register 1709 andmultiplexer 1710. Write data input 1720 is provided to register 1709 andmultiplexer 1710. Register 1709 is clocked by ClkC clock signal 1215 andprovides an output to multiplexer 1710. Multiplexer 1710 receivesTPhShC[31] selection input 1719 and provides write data output 1721.Block 1704 comprises register 1711 and multiplexer 1712. Read data input1723 is provided to register 1711 and multiplexer 1712. Register 1711 isclocked by ClkC clock signal 1215 and provides an output to multiplexer1712. Multiplexer 1712 receives RPhShC[31] selection input 1722 andprovides read data output 1724. While only two instances of the blocksfor the write data and only two instances of the blocks for the readdata are illustrated, it is understood that the blocks may be replicatedfor each bit of write data and each bit of read data.

The PhShC block 1240 is the final logic block that is used to adjust thedelay of the 32×8 read data bits and the 32×8 write data bits so thatall are driven or sampled from/to the same ClkC clock edge in thecontroller logic block. This is accomplished with an eight bit registerwhich can be inserted into the path of the read and write data for eachslice. The insertion of the delay is determined by the two control busesTPhShC[31:0] and RPhShC[31:0]. There is one control bit for each slice,since the propagation delay of the read and write data may cross a ClkCboundary at any memory slice position. Some systems with larger skews inthe read and write data across the memory slices may need more than oneClkC of adjustment. The PhShC cells shown can be easily extended toprovide additional delay by adding more registers and more multiplexerinputs.

The two control buses TPhShC[31:0] and RPhShC[31:0] are configuredduring initialization with a calibration procedure. As with the otherphase-adjusting steps, test bits are read and written to each memoryslice, and the control bits are set to the values that, in the exampleembodiment, allow all 256 read data bits to be sampled in one ClkC cycleand all 256 write data bits to be driven in one ClkC cycle by thecontroller logic.

FIG. 18 is a block diagram illustrating the logic details of the skiplogic from the transmit block 203 (in FIG. 13) of a memory controllercomponent in accordance with an embodiment of the invention. The skiplogic comprises registers 1801, 1802, 1803, 1804, and 1806, andmultiplexer 1805. RClkC1B clock input 1807 is provided to register 1801and is used to clock register 1803. ClkCD clock input 1222 is used toclock register 1801, which provides an output to register 1802. Register1802 receives LoadSkip signal 1238 and is clocked by ClkC clock signal1215, providing an output to multiplexer 1805 and an output used toclock registers 1804 and 1806. Register 1803 receives data in domainRClkC1B at input 1808 and provides an output to register 1804 andmultiplexer 1805. Register 1804 provides an output to multiplexer 1805.Multiplexer 1805 provides an output to register 1806. Register 1806provides data in domain ClkC at output 1809.

The circuit transfers the data in the RClkC1B clock domain to the ClkCdomain. These two clocks have the same frequency, but may have any phasealignment. The solution is to sample RClkC1B with a delayed version ofClkC called ClkCD (the limits on the amount of delay can be determinedby the system, but in one embodiment, the nominal delay is ¼ of a ClkCcycle). This sampled value is called SkipR, and it determines whetherthe data in an RClkC1B register may be transferred directly to a ClkCregister, or whether the data must first pass through anegative-edge-triggered ClkC register.

Regarding FIG. 18, the following worst case setup constraints can beassumed:

Case B0

T _(D,MAX) +t _(H1,MIN) +t _(CL,MIN) +t _(V,MAX) +t _(M,MAX) +t _(S,MIN)<=t _(CYCLE)

or

t _(D,MAX) <=t _(CH,MIN) −t _(H1,MIN) −t _(V,MAX) −t _(M,MAX) −t_(S,MIN)  **constraint S**

Case D1

t _(D,MAX) +t _(H1,MIN) +t _(CYCLE) +t _(V,MAX) +t _(S,MIN) <=t _(CYCLE)+t _(CL,MIN)

or

t _(D,MAX) <=t _(CL,MIN) −t _(H1,MIN) −t _(V,MAX) −t _(S,MIN)

The following worst case hold constraints can be assumed:

Case A1

t _(D,MIN) −t _(S1,MIN) +t _(V,,MIN) >=t _(H,MIN)

or

t _(D,MIN) >=t _(H,MIN) +t _(S1,MIN) −t _(V,,MIN)  **constraint H**

Case C0

t _(D,MIN) −t _(S1,MIN) +t _(V,,MIN) +t _(M,,MIN) >=t _(H,MIN)

or

t _(D,MIN) >=t _(H,MIN) +t _(S1,MIN) −t _(V,,MIN) −t _(M,,MIN)

The timing parameters used above are defined as follow:

t_(S1)—Setup time for clock samplert_(H1)—Hold time for clock samplert_(S)—Setup time for data registerst_(H)—Hold time for data registerst_(V)—Valid delay (clock-to-output) of data registerst_(M)—Propagation delay of data multiplexert_(CYCLE)—Clock cycle time (RClkC1B, ClkC, ClkCD)t_(CH)—Clock high time (RClkC1B, ClkC, ClkCD)t_(CL)—Clock low time (RClkC1B, ClkC, ClkCD)t_(D)—Offset between ClkC and ClkCD (ClkCD is later)

Note:

t_(D,NOM)˜t_(CYCLE)/4t_(CH.NOM)˜t_(CYCLE)/2t_(CL.NOM)˜t_(CYCLE)/2

FIG. 19 is a timing diagram illustrating the timing details of the skiplogic of the receive block 203 (illustrated in FIG. 13) in accordancewith an embodiment of the invention. FIG. 19 illustrates waveforms ofClkCD clock signal 1901, ClkC clock signal 1902, RClkC1B (case A0) clocksignal 1903, RClkC1B (case A1) clock signal 1904, RClkC1B (case B0)clock signal 1905, RClkC1B (case B1) clock signal 1906, RClkC1B (caseC0) clock signal 1907, RClkC1B (case C1) clock signal 1908, RClkC1B(case D0) clock signal 1909, and RClkC1B (case D1) clock signal 1910.Times 1911, 1912, 1913, 1914, 1915, 1916, 1917, and 1918, at intervalsof one clock cycle, are illustrated to indicate the timing differencesbetween the clock signals.

FIG. 19 generally summarizes the possible phase alignments of RClkC1Band ClkC as eight cases labeled A0 through D1. These cases aredistinguished by the position of the RClkC1B rising and falling edgerelative to the set/hold window of the rising edge of ClkCD whichsamples RClkC1B to determine the SkipR value. Clearly, if the RClkC1Brising or falling edge is outside of this window, it will be correctlysampled. If it is at the edge of the window or inside the window, thenit can be sampled as either a zero or one (i.e., the validity of thesample cannot be ensured). The skip logic has been designed such that itfunctions properly in either case, and this then determines the limitson the delay of the ClkCD clock t_(D).

For the receive block, case B0 1905 has the worst case setup constraint,and case A1 1904 has the worst case hold constraint:

t _(D,MAX) <=t _(CH,MIN) −t _(H1,MIN) −t _(V,MAX) −t _(M,MAX) −t_(S,MIN)  **constraint S**

t _(D,MIN) >=t _(H,MIN) +t _(S1,MIN) −t _(V,,MIN)  **constraint H**

As mentioned earlier, the nominal value of t_(D) (the delay of ClkCDrelative to ClkC) is expected to be ¼ of a ClkC cycle. The value oft_(D) can vary up to the t_(D,MAX) value shown above, or down to thet_(D,MIN) value, also shown above. If the setup (e.g., t_(S1), t_(S)),hold (e.g., t_(H1), t_(H)), multiplexer propagation delay (e.g., t_(M)),and valid (e.g., t_(V)) times all went to zero, then the t_(D) valuecould vary up to t_(CH,MIN) (the minimum high time of ClkC) and down tozero. However, the finite set/hold window of registers, and the finiteclock-to-output (valid time) delay and multiplexer delay combine toreduce the permissible variation of the t_(D) value.

Note that it would be possible to change some of the elements of theskip logic without changing its basic function. For example, a samplingclock ClkCD may be used that is earlier rather than later (theconstraint equations are changed, but there is a similar dependency ofthe timing skew range of ClkC to ClkCD upon the various set, hold, andvalid timing parameters). In other embodiments, anegative-edge-triggered RClkC1B register is used instead of a ClkCregister into the domain-crossing path (again, the constraint equationsare changed, but a similar dependency of the timing skew range of ClkCto ClkCD upon the various set, hold, and valid timing parametersremains).

Finally, it should be noted that the skip value that is used ispreferably generated once during initialization and then loaded (withthe LoadSkip control signal) into a register. Such a static value ispreferable to rather than one that is sampled on every ClkCD edgebecause if the alignment of RClkC1B is such that it has a transition inthe set/hold window of the ClkCD sampling register, it may generatedifferent skip values each time it is sampled. This would not affect thereliability of the clock domain crossing (the RClkC1B date would becorrectly transferred to the ClkC register), but it would affect theapparent latency of the read data as measured in ClkC cycles in thecontroller. That is, sometimes the read data would take a ClkC cyclelonger than at other times. Sampling the skip value and using it for alldomain crossings solves this problem. Also note that during calibration,every time the RClkC1B phase is adjusted, the LoadSkip control is pulsedin case the skip value changes.

FIG. 20 is a block diagram illustrating the logic details of the skiplogic of the transmit block 202 of FIG. 13 in accordance with anembodiment of the invention. The skip logic comprises registers 2001,2002, 2003, 2004, and 2006, and multiplexer 2005. TClkC1B clock input2007 is provided to register 2001 and is used to clock register 2006.ClkCD clock input 1222 is used to clock register 2001, which provides anoutput to register 2002. Register 2002 receives LoadSkip signal 1238 andis clocked by ClkC clock signal 1215, providing an output to multiplexer2005 and an output used to clock registers 2003 and 2004. Register 2003receives data in domain ClkC at input 2008 and provides an output toregister 2004 and multiplexer 2005. Register 2004 provides an output tomultiplexer 2005. Multiplexer 2005 provides an output to register 2006.Register 2006 provides data in domain TClkC1B at output 2009.

The circuit of FIG. 20 is used in the transfer of data in the ClkC clockdomain to the TClkC1B domain. The two clocks ClkC and TClkC1B have thesame frequency, but may be phase mismatched. One technique that can beused in the clock domain crossing is to sample TClkC1B with a delayedversion of ClkC called ClkCD (the limits on the amount of delay canvary, but in one embodiment, the delay selected is ¼ of a ClkC cycle).The sampled value, SkipT, determines whether the data in a ClkC registeris transferred directly to a TClkC1B register, or whether the data firstpasses through a negative-edge-triggered ClkC register.

Regarding FIG. 20, the following worst case setup constraints can beassumed:

Case C0

t _(D,MIN−t) _(S1,MIN) >=t _(V,MAX) +t _(M,MAX) +t _(S,MIN)

or

t _(D,MIN) >=t _(S1,MIN) +t _(V,MAX) +t _(M,MAX) +t_(S,MIN)  **constraint S**

Case A1

t _(D,MIN) −t _(S1,MIN) >=t _(V,MAX) +t _(S,MIN)

or

t _(D,MIN) >=t _(S1,MIN) +t _(V,MAX) +t _(S,MIN)

The following worst case hold constraints can be assumed:

Case D1

t _(H,MIN) <=t _(CH,MIN) −t _(D,MAX) −t _(H1,MIN) −t _(V,,MIN)

or

t _(D,MAX) <=t _(CH,MIN) −t _(H1,MIN) −t _(V,MIN) −t _(H,MIN)

or

t _(D,MAX) <=t _(CL,MIN) −t _(H1,MIN) −t _(V,MIN) −t _(M,,MIN) −t_(H,MIN)

Case B0

t _(H,MIN) <=t _(CL,MIN) −t _(D,MAX) −t _(H1,MIN) −t _(V,,MIN) −t_(M,,MIN)

or

t _(D,MAX) <=t _(CL,MIN) −t _(H1,MIN) −t _(V,MIN) −t _(M,,MIN) −t_(H,MIN)  **constraint H**

Definitions for the timing parameters used above may be found in thediscussion of FIG. 18 above.

FIG. 21 is a timing diagram illustrating the timing details of the skiplogic of the transmit block 202 of FIG. 13 in accordance with anembodiment of the invention. FIG. 21 illustrates waveforms of ClkCDclock signal 2101, ClkC clock signal 2102, TClkC1B (case A0) clocksignal 2103, TClkC1B (case A1) clock signal 2104, TClkC1B (case B0)clock signal 2105, TClkC1B (case B1) clock signal 2106, TClkC1B (caseC0) clock signal 2107, TClkC1B (case C1) clock signal 2108, TClkC1B(case D0) clock signal 2109, and TClkC1B (case D1) clock signal 2110.Times 2111, 2112, 2113, 2114, 2115, 2116, 2117, and 2118, at intervalsof one clock cycle, are illustrated to indicate the timing differencesbetween the clock signals.

FIG. 21 generally summarizes the possible phase alignments of TClkC1Band ClkC as eight cases labeled A0 through D1. These cases aredistinguished by the position of the TClkC1B rising and falling edgerelative to the set/hold window of the rising edge of ClkCD whichsamples TClkC1B to determine the SkipR value. Clearly, if the TClkC1Brising or falling edge is outside of this window, it will be correctlysampled. If it is at the edge of the window or inside the window, thenit can be sampled as either a zero or one (i.e., the validity of thesample cannot be ensured). The skip logic has been designed such that itfunctions properly in either case, and this then determines the limitson the delay of the ClkCD clock t_(D).

For the transmit block, case C0 2107 has the worst case setupconstraint, and case B0 2105 has the worst case hold constraint:

t _(D,MIN) >=t _(S1,MIN) +t _(V,MAX) +t _(M,MAX) +t_(S,MIN)  **constraint S**

t _(D,MAX) <=t _(CL,MIN) −t _(H1,MIN) −t _(V,MIN) −t _(M,,MIN) −t_(H,MIN)  **constraint H**

As mentioned earlier, the nominal value of t_(D) (the delay of ClkCDrelative to Clkc) will by ¼ of a ClkC cycle. This can vary up to thet_(D,MAX) value shown above, or down to the t_(D,MIN) value. If the set,hold, mux (i.e., multiplexer), and valid times all went to zero, thenthe t_(D) value could vary up to t_(CH,MIN) (the minimum high time ofClkC) and down to zero. However, the finite set/hold window ofregisters, and the finite clock-to-output (valid time) delay andmultiplexer delay combine to reduce the permissible variation of thet_(D) value.

As described with respect to FIG. 19 above, some elements of the skiplogic can be changed for different embodiments while preserving itsgeneral functionality. Similarly, as described with respect to the skiplogic of FIG. 19, the skip value that is used is preferably generatedduring initialization and then loaded (with the LoadSkip control signal)into a register.

FIG. 22 is a timing diagram illustrating an example of a data clockingarrangement in accordance with an embodiment of the invention. However,in this example, the clock phases in the memory controller and memorycomponents have been adjusted to a different set of values than in theexample illustrated in FIGS. 5 though 21. The waveforms of WClk_(S1,M0)clock signal 2201 and RClk_(S1,M0) clock signal 2202 are illustrated toshow the data timing for slice 1 from the perspective of the memorycontroller component at slice 0. The rising edges of sequential cyclesof WClk_(S1,M0) clock signal 2201 occur at times 2205, 2206, 2207, 2208,2209, 2210, 2211, and 2212, respectively. Write datum information Da2213 is present on the data lines at the controller at time 2205. Readdatum information Qb 2204 is present at time 2208. Read datuminformation Qc 2215 is present at time 2209. Write datum information Dd2216 is present at time 2210. Write datum information De 2217 is presentat time 2211.

The waveforms of WClk_(S1,M1) clock signal 2203 and RClk_(S1,M1) clocksignal 2204 are illustrated to show the data timing for slice 1 from theperspective of the memory component at slice 1. Write datum informationDa 2218 is present on the data lines at the memory component at time2206. Read datum information Qb 2219 is present at time 2207. Read datuminformation Qc 2220 is present at time 2208. Write datum information Dd2221 is present at time 2211. Write datum information De 2222 is presentat time 2212.

The examplary system illustrated in FIGS. 5 through 21 assumed that theclock for the read and write data were in phase at each memorycomponent. FIG. 22 assumes that for each slice the read clock at eachmemory component is in phase with the write clock at the controller(RClk_(Si,M0)=WClk_(Si,M1)), and because the propagation delay t_(PD2)is the same in each direction, the write clock at each memory componentis in phase with the read clock at the controller(WClk_(Si,M0)=RClk_(Si,M1)). This phase relationship shifts the timingslots for the read and write data relative to FIG. 6, but does notchange the fact that two idle cycles are inserted during awrite-read-read-write sequence. The phase relationship alters thepositions within the system where domain crossings occur (some domaincrossing logic moves from the controller into the memory components).

FIGS. 23 through 26 are timing diagrams illustrating an example of adata clocking arrangement in accordance with an embodiment of theinvention. However, in this example the clock phases in the memorycontroller and memory components have been adjusted to a different setof values than those in the example illustrated in FIGS. 5 though 21.The example in FIGS. 23 through 26 also uses a different set of clockphase values than the example in FIG. 22.

FIG. 23 is a timing diagram illustrating an example of a data clockingarrangement in accordance with an embodiment of the invention. Thewaveforms of WClk_(S1,M0) clock signal 2301 and RClk_(S1,M0) clocksignal 2302 are illustrated to show the data timing for slice 1 from theperspective of the memory controller component at slice 0. Rising edgesof sequential cycles of WClk_(S1,M0) clock signal 2301 occur at times2305, 2306, 2307, and 2308, respectively. Write datum information Da2309 is present on the data bus at the controller during a first cycleof WClk_(S1,M0) clock signal 2301. Read datum information Qb 2310 ispresent at a fourth cycle of WClk_(S1,M0) clock signal 2301. Read datuminformation Qc 2311 is present at time 2305. Write datum information Dd2312 is present at time 2306. Write datum information De 2313 is presentat time 2307.

The waveforms of WClk_(S1,M1) clock signal 2303 and RClk_(S1,M1) clocksignal 2304 are illustrated to show the data timing for slice 1 from theperspective of the memory component at slice 1. Write datum informationDa 2314 is advanced one clock cycle relative to its position from theperspective of the memory controller component at slice 0. In otherwords, the write data appears on the data bus at the memory deviceapproximately one clock cycle later than when it appears on the data busat the controller. Read datum information Qb 2315 is delayed one clockcycle relative to its position from the perspective of the memorycontroller component at slice 0. Read datum information Qc 2316 is alsodelayed one clock cycle relative to its position from the perspective ofthe memory controller component at slice 0. Write datum information Dd2317 is present at time 2317. Write datum information De 2318 is presentat time 2308.

The example system assumes that the clock for the read and write dataare in phase at each memory component. FIG. 23 assumes that for eachslice the read clock and write clock are in phase at the controller(RClk_(Si,M0)=WClk_(Si,M0)), and also that each slice is in phase withevery other slice at the controller (WClk_(Si,M0)=WClk_(Sj,M0)). Thisshifts the timing slots for the read and write data relative to FIG. 6and FIG. 22, but it does not change the fact that two idle cycles areused during a write-read-read-write sequence. The phase relationshipalters the positions within the system where domain crossings occur (allthe domain crossing logic moves from the controller into the memorycomponents).

FIG. 6 represents the case in which all three clock phases (address,read data, and write data) are made the same at each memory component,FIG. 23 represents the case in which all three clock phases (address,read data, and write data) are made the same at the memory controller,and FIG. 22 represents one possible intermediate case. This range ofcases is shown to emphasize that various embodiments of the inventionmay be implemented with various phasing. The memory controller andmemory components can be readily configured to support any combinationof clock phasing.

The one extreme case in which all three clock phases (address, readdata, and write data) are made the same at each memory component(illustrated in FIGS. 5 through 21) is important because there is asingle clock domain within each memory component. The other extreme casein which all three clock phases (address, read data, and write data) aremade the same at the memory controller (FIG. 23) is also importantbecause there is a single clock domain within the controller. FIGS. 24through 26 further illustrate this case.

FIG. 24 is a timing diagram illustrating timing at the memory controllercomponent for the example of the data clocking arrangement illustratedin FIG. 23 in accordance with an embodiment of the invention. Thewaveforms of AClk_(S0,M1) clock signal 2401 are illustrated to show theaddress/control timing for memory module one from the perspective of thememory controller component at slice 0. The rising edges of sequentialcycles of AClk_(S0,M1) clock signal 2401 occur at times 2406, 2407,2408, 2409, 2410, 2411,2412, and 2413, respectively. Address informationACa 2414 is present on the address signal lines at the controller attime 2406. Address information ACb 2415 is present at time 2407. Addressinformation ACc 2416 is present at time 2408. Address information ACd2417 is present at time 2412.

The waveforms of WClk_(S1,M0) clock signal 2402 and RClk_(S1,M0) clocksignal 2403 are illustrated to show the data timing for slice 1 from theperspective of the memory controller component at module 0. Write datuminformation Da 2418 is present on the data lines at the controller attime 2407. Read datum information Qb 2419 is present at time 2411. Readdatum information Qc 2420 is present at time 2412. Write datuminformation Dd 2421 is present at time 2413.

The waveforms of WClk_(SNs,M0) clock signal 2404 and RClk_(SNs,M0) clocksignal 2405 are illustrated to show the data timing for slice N_(S) fromthe perspective of the memory controller component at module 0. Writedatum information Da 2422 is present on the data lines at the controllerat time 2407. Read datum information Qb 2423 is present at time 2411.Read datum information Qc 2424 is present at time 2412. Write datuminformation Dd 2425 is present at time 2413.

FIGS. 24 through 26 show the overall system timing for the case in whichall clock phases are aligned at the controller. FIG. 24 is the timing atthe controller, and is analogous to FIG. 7, except for the fact that theclocks are all common at the controller instead of at each memory slice.As a result, the clocks are all aligned in FIG. 24, and the two-cyclegap that the controller inserts into the write-read-read-write sequenceis apparent between address packets ACc and ACd.

FIG. 25 is a timing diagram illustrating timing at a first slice of arank of memory components for the example of the data clockingarrangement illustrated in FIG. 23 in accordance with an embodiment ofthe invention. The waveforms of AClk_(S1,M1) clock signal 2501 isillustrated to show the address/control timing for memory module onefrom the perspective of the memory component at slice 1. Times 2504,2505, 2506, 2507, 2508, 2509, 2510, and 2511 correspond to times 2406,2407, 2408, 2409, 2410, 2411,2412, and 2413, respectively, of FIG. 24.Signal AClk_(S1,M1) 2501 is delayed by a delay of t_(PD0) relative tosignal AClk_(S0,M1) 2401 in FIG. 24. In other words, the AClk signaltakes a time period t_(PD0) to propagate from the controller to thememory component. Address information ACa 2512 is associated with edge2530 of signal 2501. Address information ACb 2513 is associated withedge 2531 of signal 2501. Address information ACc 2514 is associatedwith edge 2532 of signal 2501. Address information ACd 2515 isassociated with edge 2533 of signal 2501.

The waveforms of WClk_(S1,M1) clock signal 2502 and RClk_(S1,M1) clocksignal 2503 are illustrated to show the data timing for slice 1 from theperspective of the memory component at module 1. FIG. 25 shows thetiming at the first memory component (slice 1), and the clocks havebecome misaligned because of the propagation delays t_(PD2) and t_(PD0).Signal WClk_(S1,M1) 2502 is delayed by a delay of t_(PD2) relative tosignal WClk_(S1,M1) 2402 of FIG. 24. Write datum information Da 2516 isassociated with edge 2534 of signal 2502. Write datum information Dd2519 is associated with edge 2537 of signal 2502. Signal RClk_(S1,M1)2503 precedes by t_(PD2) signal RClk_(S1,M0) 2403 of FIG. 24. Read datuminformation Qb 2517 is associated with edge 2535 of signal 2503. Readdatum information Qc 2518 is associated with edge 2536 of signal 2503.

FIG. 26 is a timing diagram illustrating timing a last slice of a rankof memory components for the example of the data clocking arrangementillustrated in FIG. 23 in accordance with an embodiment of theinvention. The waveforms of AClk_(SNs,M1) clock signal 2601 areillustrated to show the address/control timing for memory module onefrom the perspective of the memory component at slice N_(S). Times 2604,2605, 2606, 2607, 2608, 2609, 2610, and 2611 correspond to times 2406,2407, 2408, 2409, 2410, 2411,2412, and 2413, respectively, of FIG. 24.Signal AClk_(SNs,M1) 2601 is delayed by a delay of t_(PD0)+t_(PD1)relative to signal AClk_(S0,M1) 2401 of FIG. 24. In other words, addressinformation ACa 2612 is associated with edge 2630 of signal 2601.Address information ACb 2613 is associated with edge 2631 of signal2601. Address information ACc 2614 is associated with edge 2632 ofsignal 2601. Address information ACd 2615 is associated with edge 2633of signal 2601.

The waveforms of WClk_(SNs,M1) clock signal 2602 and RClk_(SNs,M1) clocksignal 2603 are illustrated to show the data timing for slice N_(S) fromthe perspective of the memory component at module 1. SignalWClk_(SNs,M1) 2602 is delayed by a delay of t_(PD2) relative to signalWClk_(S1,M0) 2402 of FIG. 24. Write datum information Da 2616 isassociated with edge 2634 of signal 2602 (e.g., the write datuminformation Da 2616 is present on the data bus at the memory componentwhen edge 2634 of signal 2602 is present on the AClk clock conductor atthe memory component). Write datum information Dd 2619 is associatedwith edge 2637 of signal 2602. Signal RClk_(SNs,M1) 2603 precedes byt_(PD2) signal RClk_(S1,M0) 2603 of FIG. 24. Read datum information Qb2617 is associated with edge 2635 of signal 2603. Read datum informationQc 2618 is associated with edge 2636 of signal 2603.

FIG. 26 shows the timing at the last memory component (slice N_(S)), andthe clocks have become further misaligned because of the propagationdelays t_(PD1). As a result, each memory component will have domaincrossing hardware similar to that which is in the controller, asdescribed with respect to FIGS. 12-21.

As a reminder, the example system described in FIG. 2 included singlememory module, a single rank of memory components on that module, acommon address and control bus (so that each controller pin connects toa pin on each of two or more memory components), and a sliced data bus(wherein each controller pin connects to a pin on exactly one memorycomponent). These characteristics were chosen for the example embodimentin order to simplify the discussion of the details and because thisconfiguration is an illustrative special case. However, the clockingmethods that have been discussed can be extended to a wider range ofsystem topologies. Thus, it should be understood that embodiments of theinvention may be practiced with systems having features that differ fromthe features of the example system of FIG. 2.

The rest of this discussion focuses on systems with multiple memorymodules or multiple memory ranks per module (or both). In these systems,each data bus wire connects to one controller pin and to one pin on eachof two or more memory components. Since the t_(PD2) propagation delaybetween the controller and each of the memory components will bedifferent, the clock domain crossing issue in the controller becomesmore complicated. If the choice is made to align all clocks in eachmemory component, then the controller will need a set of domain crossinghardware for each rank or module of memory components in a slice. Thissuffers from a drawback in that it requires a large amount of controllerarea and that it adversely affects critical timing paths. As such, in amultiple module or multiple rank system, it may be preferable to keepall of the clocks aligned in the controller, and to place the domaincrossing logic in the memory components.

FIG. 27 is a block diagram illustrating a memory system that includesmultiple ranks of memory components and multiple memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 2702, memory module 2703, memorymodule 2730, write clock 2705, read clock 2706, write clock 2726, readclock 2727, splitting component 2742, splitting component 2743,termination component 2720, termination component 2724, terminationcomponent 2737, and termination component 2740. It should be understoodthat there is at least one write clock per slice in the example systemshown.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 2703 includes memory components 2716, 2717,and 2718. A second rank of memory module 2703 includes memory components2744, 2745, and 2746. A first rank of memory module 2730 includes memorycomponents 2731, 2732, and 2733. A second rank of memory module 2730includes memory components 2734, 2735, and 2736.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice2713, slice 2714, and slice 2715. Each slice comprises one memorycomponent of each rank. In this embodiment, each slice within eachmemory module is provided with its own data bus 2708, write clockconductor 2710, and read clock conductor 2711. Data bus 2708 is coupledto memory controller component 2702, memory component 2716, and memorycomponent 2744. A termination component 2720 is coupled to data bus 2708near memory controller component 2702, and may, for example, beincorporated into memory controller component 2702. A terminationcomponent 2721 is coupled near an opposite terminus of data bus 2708,and is preferably provided within memory module 2703. Write clock 2705is coupled to write clock conductor 2710, which is coupled to memorycontroller component 2702 and to memory components 2716 and 2744. Atermination component 2723 is coupled near a terminus of write clockconductor 2710 near memory components 2716 and 2744, preferably withinmemory module 2703. Read clock 2706 is coupled to read clock conductor2711, which is coupled through splitting component 2742 to memorycontroller component 2702 and memory components 2716 and 2744. Splittingcomponents are described in additional detail below. A terminationcomponent 2724 is coupled near memory controller component 2702, andmay, for example, be incorporated into memory controller component 2702.A termination component 2725 is coupled near a terminus of read clockconductor 2711 near memory components 2716 and 2744, preferably withinmemory module 2703.

Slice 2713 of memory module 2730 is provided with data bus 2747, writeclock conductor 2728, read clock conductor 2729. Data bus 2747 iscoupled to memory controller component 2702, memory component 2731, andmemory component 2734. A termination component 2737 is coupled to databus 2747 near memory controller component 2702, and may, for example, beincorporated into memory controller component 2702. A terminationcomponent 2738 is coupled near an opposite terminus of data bus 2747,and is preferably provided within memory module 2730. Write clock 2726is coupled to write clock conductor 2728, which is coupled to memorycontroller component 2702 and to memory components 2731 and 2734. Atermination component 2739 is coupled near a terminus of write clockconductor 2728 near memory components 2731 and 2734, preferably withinmemory module 2730. Read clock 2727 is coupled to read clock conductor2729, which is coupled through splitting component 2743 to memorycontroller component 2702 and memory components 2731 and 2734. Atermination component 2740 is coupled near memory controller component2702, and may, for example, be incorporated into memory controllercomponent 2702. A termination component 2741 is coupled near a terminusof read clock conductor 2729 near memory components 2731 and 2734,preferably within memory module 2730.

The sliced data bus can be extended to multiple ranks of memorycomponent and multiple memory components in a memory system. In thisexample, there is a dedicated data bus for each slice of each module.Each data bus is shared by the ranks of memory devices on each module.It is preferable to match the impedances of the wires as they transitionfrom the main printed wiring board onto the modules so that they do notdiffer to an extent that impairs performance. In some embodiments, thetermination components are on each module. A dedicated read and writeclock that travels with the data is shown for each data bus, althoughthese could be regarded as virtual clocks; i.e. the read and writeclocks could be synthesized from the address/control clock as in theexample system that has already been described.

FIG. 28 is a block diagram illustrating a memory system that includesmultiple ranks of memory components and multiple memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 2802, memory module 2803, memorymodule 2830, write clock 2805, read clock 2806, splitting component2842, splitting component 2843, splitting component 2848, splittingcomponent 2849, splitting component 2850, splitting component 2851,termination component 2820, termination component 2824, terminationcomponent 2880, and termination component 2881.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 2803 includes memory components 2816, 2817,and 2818. A second rank of memory module 2803 includes memory components2844, 2845, and 2846. A first rank of memory module 2830 includes memorycomponents 2831, 2832, and 2833. A second rank of memory module 2830includes memory components 2834, 2835, and 2836.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice2813, slice 2814, and slice 2815. Each slice comprises one memorycomponent of each rank. In this embodiment, each slice across multiplememory modules is provided with a data bus 2808, write clock conductor2810, and read clock conductor 2811. Data bus 2808 is coupled to memorycontroller component 2802, via splitter 2848 to memory components 2816and 2844, and via splitter 2849 to memory components 2831 and 2834. Atermination component 2820 is coupled to data bus 2808 near memorycontroller component 2802, and may, for example, be incorporated intomemory controller component 2802. A termination component 2880 iscoupled near an opposite terminus of data bus 2808, near splitter 2849.A termination component 2821 is coupled near memory components 2816 and2844 and is preferably provided within memory module 2803. A terminationcomponent 2838 is coupled near memory components 2831 and 2834 and ispreferably provided within memory module 2830.

Write clock 2805 is coupled to write clock conductor 2810, which iscoupled to memory controller component 2802, via splitter 2850 to memorycomponents 2816 and 2844, and via splitter 2851 to memory components2831 and 2834. A termination component 2881 is coupled near a terminusof write clock conductor 2810, near splitter 2851. A terminationcomponent 2823 is coupled near memory components 2816 and 2844,preferably within memory module 2803. A termination component 2839 iscoupled near memory components 2831 and 2834, preferably within memorymodule 2830.

Read clock 2806 is coupled to read clock conductor 2811, which iscoupled through splitting component 2843 to memory components 2831 and2834 and through splitting component 2842 to memory controller component2802 and memory components 2816 and 2844. A termination component 2824is coupled near memory controller component 2802, and may, for example,be incorporated into memory controller component 2802. A terminationcomponent 2825 is coupled near a terminus of read clock conductor 2811near memory components 2816 and 2844, preferably within memory module2803. A termination component 2841 is coupled near a terminus of readclock conductor 2811 near memory components 2831 and 2834, preferablywithin memory module 2830.

As illustrated, this example utilizes a single data bus per data slicethat is shared by all the memory modules, as in FIG. 28. In thisexample, each data wire is tapped using some form of splitting componentS. This splitter could be a passive impedance matcher (three resistorsin a delta- or y-configuration) or some form of active buffer or switchelement. In either case, the electrical impedance of each wire ismaintained down its length (within manufacturing limits) so that signalintegrity is kept high. As in the previous configuration, each split-offdata bus is routed onto a memory module, past all the memory componentsin the slice, and into a termination component.

FIG. 29 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 2902, memory module 2903, memorymodule 2930, write clock 2905, read clock 2906, termination component2920, termination component 2921, termination component 2923, andtermination component 2924.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 2903 includes memory components 2916, 2917,and 2918. A second rank of memory module 2903 includes memory components2944, 2945, and 2946. A first rank of memory module 2930 includes memorycomponents 2931, 2932, and 2933. A second rank of memory module 2930includes memory components 2934, 2935, and 2936.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice2913, slice 2914, and slice 2915. Each slice comprises one memorycomponent of each rank. In this embodiment, each slice across memorymodules shares a common daisy-chained data bus 2908, a commondaisy-chained write clock conductor 2910, and a common daisy-chainedread clock conductor 2911. Data bus 2908 is coupled to memory controllercomponent 2902, memory component 2916, memory component 2944, memorycomponent 2931, and memory component 2934. A termination component 2920is coupled to data bus 2908 near memory controller component 2902, andmay, for example, be incorporated into memory controller component 2902.A termination component 2921 is coupled near an opposite terminus ofdata bus 2908.

Write clock 2905 is coupled to write clock conductor 2910, which iscoupled to memory controller component 2902 and to memory components2916, 2944, 2931, and 2934. A termination component 2923 is coupled neara terminus of write clock conductor 2910. Read clock 2906 is coupled toread clock conductor 2911, which is coupled to memory controllercomponent 2902 and memory components 2916, 2944, 2931, and 2934. Atermination component 2924 is coupled near memory controller component2902, and may, for example, be incorporated into memory controllercomponent 2902.

In this embodiment, there is a single data bus per data slice, butinstead of using splitting components, each data wire is routed onto amemory module, past all the memory components of the slice, and back offthe module and onto the main board to “chain” through another memorymodule or to pass into a termination component. The same threeconfiguration alternatives described above with respect to the data busare also applicable to a common control/address bus in a multi-module,multi-rank memory system.

FIG. 30 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with adedicated control/address bus per memory module in accordance with anembodiment of the invention. The memory system comprises memorycontroller component 3002, memory module 3003, memory module 3030,address/control clock 3004, address/control clock 3053, terminationcomponent 3052, and termination component 3056.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3003 includes memory components 3016, 3017,and 3018. A second rank of memory module 3003 includes memory components3044, 3045, and 3046. A first rank of memory module 3030 includes memorycomponents 3031, 3032, and 3033. A second rank of memory module 3030includes memory components 3034, 3035, and 3036.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3013, slice 3014, and slice 3015. Each slice comprises one memorycomponent of each rank. In this embodiment, each memory module isprovided with its own address bus 3007 and address/control clockconductor 3010. Address bus 3007 is coupled to memory controllercomponent 3002 and memory components 3016, 3017, 3018, 3044, 3045, and3046. A termination component 3052 is coupled to address bus 3007 nearmemory controller component 3002, and may, for example, be incorporatedinto memory controller component 3002. A termination component 3019 iscoupled near an opposite terminus of address bus 3007, and is preferablyprovided within memory module 3003. Address/control clock 3004 iscoupled to address/control clock conductor 3009, which is coupled tomemory controller component 3002 and to memory components 3016, 3017,3018, 3044, 3045, and 3046. A termination component 3022 is coupled neara terminus of address/control clock conductor 3009, preferably withinmemory module 3003.

Memory module 3030 is provided with address bus 3054 and address/controlclock conductor 3055. Address bus 3054 is coupled to memory controllercomponent 3002 and to memory components, 3031, 3032, 3033, 3034, 3035,and 3036. A termination component 3056 is coupled to address bus 3054near memory controller component 3002, and may, for example, beincorporated into memory controller component 3002. A terminationcomponent 3057 is coupled near an opposite terminus of address bus 3054and is preferably provided within memory module 3030. Address/controlclock 3053 is coupled to address/control clock conductor 3055, which iscoupled to memory controller component 3002 and to memory components3031, 3032, 3033, 3034, 3035, and 3036. A termination component 3058 iscoupled near a terminus of address/control clock conductor 3055,preferably within memory module 3030.

Each control/address wire is routed onto a memory module, past all thememory components, and into a termination component. The wire routing isshown in the direction of the ranks on the module, but it could also berouted in the direction of slices.

FIG. 31 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared among the memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 3102, memory module 3103, memorymodule 3130, address/control clock 3104, splitting component 3159,splitting component 3160, splitting component 3161, splitting component3162, termination component 3163, and termination component 3164.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3103 includes memory components 3116, 3117,and 3118. A second rank of memory module 3103 includes memory components3144, 3145, and 3146. A first rank of memory module 3130 includes memorycomponents 3131, 3132, and 3133. A second rank of memory module 3130includes memory components 3134, 3135, and 3136.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3113, slice 3114, and slice 3115. Each slice comprises one memorycomponent of each rank. In this embodiment, an address bus 3107 and anaddress/control clock conductor 3109 are coupled to each memorycomponent among multiple memory modules. Address bus 3107 is coupled tomemory controller component 3102, via splitter 3159 to memory components3116, 3117, 3118, 3144, 3145, and 3146, and via splitter 3161 to memorycomponents 3131, 3132, 3133, 3134, 3135, and 3136. A terminationcomponent 3152 is coupled to address bus 3107 near memory controllercomponent 3102, and may, for example, be incorporated into memorycontroller component 3102. A termination component 3163 is coupled nearan opposite terminus of address bus 3107, near splitter 3161. Atermination component 3119 is coupled to address bus 3107, preferablywithin memory module 3103. A termination component 3157 is coupled toaddress bus 3107, preferably within memory module 3130.

Address/control clock 3104 is coupled to address/control clock conductor3109, which is coupled to memory controller component 3102, via splitter3160 to memory components 3116, 3117, 3118, 3144, 3145, and 3146, andvia splitter 3162 to memory components 3131, 3132, 3133, 3134, 3135, and3136. A termination component 3164 is coupled near a terminus ofaddress/control clock conductor 3109, near splitter 3162. A terminationcomponent 3122 is coupled to the address/control clock conductor 3109,preferably within memory module 3103. A termination component 3158 iscoupled to the address/control clock conductor 3109, preferably withinmemory module 3130.

In this example, each control/address wire is tapped using some form ofsplitting component S. This splitter could be a passive impedancematcher (three resistors in a delta- or y-configuration) or some form ofactive buffer or switch element. In either case, the electricalimpedance of each wire is maintained down its length (withinmanufacturing limits) so that signal integrity is kept high. As in theprevious configuration, each split-off control/address bus is routedonto a memory module, past all the memory components, and into atermination component.

FIG. 32 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 3202, memory module 3203, memorymodule 3230, address/control clock 3204, termination component 3219, andtermination component 3222.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3203 includes memory components 3216, 3217,and 3218. A second rank of memory module 3203 includes memory components3244, 3245, and 3246. A first rank of memory module 3230 includes memorycomponents 3231, 3232, and 3233. A second rank of memory module 3230includes memory components 3234, 3235, and 3236.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3213, slice 3214, and slice 3215. Each slice comprises one memorycomponent of each rank. In this embodiment, the memory components of thememory modules share a common daisy-chained address bus 3207 and acommon daisy-chained address/control clock conductor 3209. Address bus3207 is coupled to memory controller component 3202 and memorycomponents 3216, 3217, 3218, 3244, 3245, 3246, 3231, 3232, 3233, 3234,3235, and 3236. A termination component 3252 is coupled to address bus3207 near memory controller component 3202, and may, for example, beincorporated into memory controller component 3202. A terminationcomponent 3219 is coupled near an opposite terminus of address bus 3207.

Address/control clock 3204 is coupled to address/control clock conductor3209, which is coupled to memory controller component 3202 and to memorycomponents 3216, 3217, 3218, 3244, 3245, 3246, 3231, 3232, 3233, 3234,3235, and 3236. A termination component 3222 is coupled near a terminusof address/control clock conductor 3209.

Unlike the memory system of FIG. 31, instead of using some kind ofsplitting component, each control/address wire is routed onto a memorymodule, past all the memory components, and back off the module and ontothe main board to chain through another memory module or to pass into atermination component.

The same three configuration alternatives are possible for a slicedcontrol/address bus in a multi-module, multi-rank memory system. Thisrepresents a departure from the systems that have been discussed up tothis point—the previous systems all had a control/address bus that wascommon across the memory slices. It is also possible to instead providean address/control bus per slice. Each bus is preferably routed alongwith the data bus for each slice, and preferably has the sametopological characteristics as a data bus which only performs writeoperations.

FIG. 33 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with adedicated, sliced control/address bus per memory module in accordancewith an embodiment of the invention. The memory system comprises memorycontroller component 3302, memory module 3303, memory module 3330,address/control clock 3304, address/control clock 3353, terminationcomponent 3352, and termination component 3356.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3303 includes memory components 3316, 3317,and 3318. A second rank of memory module 3303 includes memory components3344, 3345, and 3346. A first rank of memory module 3330 includes memorycomponents 3331, 3332, and 3333. A second rank of memory module 3330includes memory components 3334, 3335, and 3336.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3313, slice 3314, and slice 3315. Each slice comprises one memorycomponent of each rank. In this embodiment, each slice within eachmemory module is provided with its own address bus 3307 andaddress/control clock conductor 3310. Address bus 3307 is coupled tomemory controller component 3302 and memory components 3316 and 3344. Atermination component 3352 is coupled to address bus 3307 near memorycontroller component 3302, and may, for example, be incorporated intomemory controller component 3302. A termination component 3319 iscoupled near an opposite terminus of address bus 3307, and is preferablyprovided within memory module 3303. Address/control clock 3304 iscoupled to address/control clock conductor 3309, which is coupled tomemory controller component 3302 and to memory components 3316 and 3344.A termination component 3322 is coupled near a terminus ofaddress/control clock conductor 3309, preferably within memory module3303.

Memory module 3330 is provided with address bus 3354 and address/controlclock conductor 3355. Address bus 3354 is coupled to memory controllercomponent 3302 and to memory components, 3331 and 3334. A terminationcomponent 3356 is coupled to address bus 3354 near memory controllercomponent 3302, and may, for example, be incorporated into memorycontroller component 3302. A termination component 3357 is coupled nearan opposite terminus of address bus 3354 and is preferably providedwithin memory module 3330. Address/control clock 3353 is coupled toaddress/control clock conductor 3355, which is coupled to memorycontroller component 3302 and to memory components 3331 and 3334. Atermination component 3358 is coupled near a terminus of address/controlclock conductor 3355, preferably within memory module 3330. Eachcontrol/address wire is routed onto a memory module, past all the memorycomponents in the slice, and into a termination component.

FIG. 34 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 3402, memory module 3403, memorymodule 3430, address/control clock 3404, splitting component 3459,splitting component 3460, splitting component 3461, splitting component3462, termination component 3463, and termination component 3464.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3403 includes memory components 3416, 3417,and 3418. A second rank of memory module 3403 includes memory components3444, 3445, and 3446. A first rank of memory module 3130 includes memorycomponents 3431, 3432, and 3433. A second rank of memory module 3430includes memory components 3434, 3435, and 3436.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3413, slice 3414, and slice 3415. Each slice comprises one memorycomponent of each rank. In this embodiment, an address bus 3407 and anaddress/control clock conductor 3409 are coupled to each memorycomponent in a slice among multiple memory modules. Address bus 3407 iscoupled to memory controller component 3402, via splitter 3459 to memorycomponents 3416 and 3444, and via splitter 3461 to memory components3431 and 3434. A termination component 3452 is coupled to address bus3407 near memory controller component 3402, and may, for example, beincorporated into memory controller component 3402. A terminationcomponent 3463 is coupled near an opposite terminus of address bus 3407,near splitter 3461. A termination component 3419 is coupled to addressbus 3407, preferably within memory module 3403. A termination component3457 is coupled to address bus 3407, preferably within memory module3430.

Address/control clock 3404 is coupled to address/control clock conductor3409, which is coupled to memory controller component 3402, via splitter3460 to memory components 3416 and 3444, and via splitter 3462 to memorycomponents 3431 and 3434. A termination component 3464 is coupled near aterminus of address/control clock conductor 3409, near splitter 3462. Atermination component 3422 is coupled to the address/control clockconductor 3409, preferably within memory module 3403. A terminationcomponent 3458 is coupled to the address/control clock conductor 3409,preferably within memory module 3430.

In this example, each control/address wire is tapped using some form ofsplitting component S. This splitter could be a passive impedancematcher (three resistors in a delta- or y-configuration) or some form ofactive buffer or switch element. In either case, the electricalimpedance of each wire is maintained down its length (withinmanufacturing limits) so that signal integrity is kept high. As in theprevious configuration, each split-off control/address bus is routedonto a memory module, past all the memory components, and into atermination component.

FIG. 35 is a block diagram illustrating a memory system that comprisesmultiple ranks of memory components and multiple memory modules with asingle control/address bus that is shared by all the memory modules inaccordance with an embodiment of the invention. The memory systemcomprises memory controller component 3502, memory module 3503, memorymodule 3530, address/control clock 3504, termination component 3519, andtermination component 3522.

Within each memory module, memory components are organized in ranks. Afirst rank of memory module 3503 includes memory components 3516, 3517,and 3518. A second rank of memory module 2903 includes memory components3544, 3545, and 3546. A first rank of memory module 3530 includes memorycomponents 3531, 3532, and 3533. A second rank of memory module 3530includes memory components 3534, 3535, and 3536.

The memory system is organized into slices across the memory controllercomponent and the memory modules. Examples of these slices include slice3513, slice 3514, and slice 3515. Each slice comprises one memorycomponent of each rank. In this embodiment, each slice across memorymodules shares a common daisy-chained address bus 3507 and a commondaisy-chained address/control clock conductor 3509. Address bus 3507 iscoupled to memory controller component 3502 and memory components 3516,3544, 3531, and 3534. A termination component 3552 is coupled to addressbus 3507 near memory controller component 3502, and may, for example, beincorporated into memory controller component 3502. A terminationcomponent 3519 is coupled near an opposite terminus of address bus 3507.

Address/control clock 3504 is coupled to address/control clock conductor3509, which is coupled to memory controller component 3502 and to memorycomponents 3516, 3544, 3531, and 3534. A termination component 3522 iscoupled near a terminus of address/control clock conductor 3509.

Unlike the memory system of FIG. 34, instead of using some kind ofsplitting component, each control/address wire is routed onto a memorymodule, past all the memory components, and back off the module and ontothe main board to chain through another memory module or to pass into atermination component.

As can be seen with reference to the Figures described above,embodiments of the invention allow implementation of a memory system, amemory component, and/or a memory controller component. Within theseembodiments skew may be measured according to bit time and/or accordingto a timing signal. In some embodiments, logic in the memory controllercomponent accommodates skew, while in other embodiments, logic in amemory component accommodates skew. The skew may be greater than a bittime or greater than a cycle time.

One embodiment of the invention provides a memory module with a firstwire carrying a first signal. The first wire is connected to a firstmodule contact pin. The first wire is connected to a first pin of afirst memory component. The first wire is connected to a firsttermination device. The first wire maintains an approximately constantfirst impedance value along its full length on the memory module. Thetermination component approximately matches this first impedance value.Optionally, there is a second memory component to which the first wiredoes not connect. Optionally, the first signal carries principallyinformation selected from control information, address information, anddata information during normal operation. Optionally, the terminationdevice is a component separate from the first memory component on thememory module. Optionally, the termination device is integrated intofirst memory component on the memory module. Such a memory module may beconnected to a memory controller component and may be used in a memorysystem.

One embodiment of the invention provides a memory module with a firstwire carrying a first signal and a second wire carrying a second signal.The first wire connects to a first module contact pin. The second wireconnects to a second module contact pin. The first wire connects to afirst pin of a first memory component. The second wire connects to asecond pin of the first memory component. The first wire connects to athird pin of a second memory component. The second wire does not connectto a pin of the second memory component. The first wire connects to afirst termination device. The second wire connects to a secondtermination device. The first wire maintains an approximately constantfirst impedance value along its full length on the memory module. Thesecond wire maintains an approximately constant second impedance valuealong its full length on the memory module. The first terminationcomponent approximately matches the first impedance value. The secondtermination component approximately matches the second impedance value.Optionally, the first and/or second termination device is a componentseparate from the first memory component on the memory module.Optionally, the first and/or second termination device is a integratedinto the first memory component on the memory module. Optionally, thefirst signal carries address information and the second signal carriesdata information. Such a memory module may be connected to a memorycontroller component and may be used in a memory system.

One embodiment of the invention provides a method for conducting memoryoperations in a memory system. The memory system includes a memorycontroller component and a rank of memory components. The memorycomponents include slices. The slices include a first slice and a secondslice. The memory controller component is coupled to conductors,including a common address bus connecting the memory controllercomponent to the first slice and the second slice, a first data busconnecting the memory controller component to the first slice, and asecond data bus connecting the memory controller component to the secondslice. The first data bus is separate from the second data bus Themethod includes the step of providing a signal to one of the conductors.The signal may be an address signal, a write data signal, or a read datasignal. The propagation delay of the one of the conductors is longerthan an amount of time that an element of information represented by thesignal is applied to that conductor. Optionally, the method may includethe step of providing a first data signal to the first data bus and asecond data signal to the second data bus. The first data signal relatesspecifically to the first slice and the second data signal relatesspecifically to the second slice. In one example, the first data signalcarries data to or from the first slice, while the second data signalcarries data to or from the second slice.

One embodiment of the invention provides a method for coordinatingmemory operations among a first memory component and a second memorycomponent. The method includes the step of applying a first addresssignal relating to the first memory component to a common address busover a first time interval. The common address bus is coupled to thefirst memory component and the second memory component. The method alsoincludes the step of applying a second address signal relating to thesecond memory component to the common address bus over a second timeinterval. The first time interval is shorter than a propagation delay ofthe common address bus, and the second time interval is shorter than acommon address bus propagation delay of the common address bus. Themethod also includes the step of controlling a first memory operation ofthe first memory component using a first memory component timing signal.The first memory component timing signal is dependent upon a firstrelationship between the common address bus propagation delay and afirst data bus propagation delay of a first data bus coupled to thefirst memory component. The method also includes the step of controllinga second memory operation of the second memory component using a secondmemory component timing signal. The second memory component timingsignal is dependent upon a second relationship between the commonaddress bus propagation delay and a second data bus propagation delay ofa second data bus coupled to the second memory component.

One embodiment of the invention (referred to as description B) providesa memory system with a memory controller component, a single rank ofmemory components on a single memory module, a common address busconnecting controller to all memory components of the rank insuccession, separate data buses connecting controller to each memorycomponent (slice) of the rank, an address bus carrying control andaddress signals from controller past each memory component insuccession, data buses carrying read data signals from each memorycomponent (slice) of the rank to the controller, data buses carryingwrite data signals from controller to each memory component (slice) ofthe rank, data buses carrying write mask signals from controller to eachmemory component (slice) of the rank, the read data and write datasignals of each slice sharing the same data bus wires (bidirectional),the buses designed so that successive pieces of information transmittedon a wire do not interfere, a periodic clock signal accompanying thecontrol and address signals and used by the controller to transmitinformation and by the memory components to receive information, aperiodic clock signal accompanying each slice of write data signals andoptional write mask signals and which is used by the controller totransmit information and by a memory component to receive information,and a periodic clock signal accompanying each slice of read data signalsand which is used by a memory component to transmit information and bythe controller to receive information.

One embodiment of the invention (referred to as description A) providesa memory system with features taken from the above description(description B) and also a timing signal associated with control andaddress signals which duplicates the propagation delay of these signalsand which is used by the controller to transmit information and by thememory components to receive information, a timing signal associatedwith each slice of write data signals and optional write mask signalswhich duplicates the propagation delay of these signals and which isused by the controller to transmit information and by a memory componentto receive information, a timing signal associated with each slice ofread data signals which duplicates the propagation delay of thesesignals and which is used by a memory component to transmit informationand by the controller to receive information, wherein a propagationdelay of a wire carrying control and address signals from the controllerto the last memory component is longer than the length of time that apiece of information is transmitted on the wire by the controller.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein a propagationdelay of a wire carrying write data signals and optional write masksignals from the controller to a memory component is longer than thelength of time that a piece of information is transmitted on the wire bythe controller.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein a propagationdelay of a wire carrying read data signals from a memory component tothe controller is longer than the length of time that a piece ofinformation is transmitted on the wire by the memory component.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein the alignmentsof the timing signals of the write data transmitter slices of thecontroller are adjusted to be approximately the same regardless of thenumber of slices in the rank, wherein the alignments of timing signalsof the read data receiver slices of the controller are adjusted to beapproximately the same regardless of the number of slices in the rank,and the alignments of timing signals of the read data receiver slices ofthe controller are adjusted to be approximately the same as the timingsignals of the write data transmitter slices.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein the alignmentsof the timing signals of the write data transmitter slices of thecontroller are adjusted to be mostly different from one another.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein the alignmentsof timing signals of the read data receiver slices of the controller areadjusted to be mostly different from one another.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein the alignmentsof the timing signals of the read data transmitter of each memorycomponent is adjusted to be the approximately the same as the timingsignals of the write data receiver in the same memory component andwherein the alignments of the timing signals will be different for eachmemory component slice in the rank.

One embodiment of the invention provides a memory system with featurestaken from the above description (description A) wherein the alignmentsof the timing signals of the write data transmitter of each memorycomponent is adjusted to be different from the timing signals of theread data receiver in the same memory component.

Numerous variations to the embodiments described herein are possiblewithout deviating from the scope of the claims set forth herein.Examples of these variations are described below. These examples may beapplied to control and address signals, read data signals, write datasignals, and optional write mask signals. For example, a timing signalassociated with the such signals may be generated by an external clockcomponent or by a controller component. That timing signal may travel onwires that have essentially the same topology as the wires carrying suchsignals. That timing signal may be generated from the informationcontained on the wires carrying such signals or from a timing signalassociated with any of such signals. That timing signal may be assertedan integral number of times during the interval that each piece ofinformation is present on a wire carrying such signals. As anothervariation, an integral number of pieces of information may be assertedon a wire carrying such signals each time the timing signal associatedwith such signals is asserted. As yet another variation, an integralnumber of pieces of information may be asserted on a wire carrying suchsignals each time the timing signal associated with such signals isasserted an integral number of times. The point when a timing signalassociated with such signals is asserted may have an offset relative tothe time interval that each piece of information is present on a wirecarrying such signals.

As examples of other variations, the termination components for some ofthe signals may be on any of a main printed wiring board, a memorymodule board, a memory component, or a controller component. Also, twoor more ranks of memory components may be present on the memory moduleand with some control and address signals connecting to all memorycomponents and with some control and address signals connecting to someof the memory components. It is also possible for two or more modules ofmemory components to be present in the memory system, with some controland address signals connecting to all memory components and with somecontrol and address signals connecting to some of the memory components.

Various aspects of the subject-matter described herein are set outnon-exhaustively in the following numbered clauses:

1. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices; and

conductors coupling the memory controller component to the rank ofmemory components and coupling the memory controller component to theslices of the rank of memory components, wherein a propagation delay ofone of the conductors carrying a signal selected from a group consistingof an address signal, a write data signal, and a read data signal islonger than an amount of time that an element of information representedby the signal is applied to the conductor, wherein the conductorscomprise:

-   -   a common address bus connecting the memory controller component        to each of the slices of the rank in succession; and    -   separate data buses connecting the memory controller component        to each of the slices of the rank.        2. The memory system of clause 1 wherein the common address bus        is coupled to a plurality of the slices.        3. The memory system of clause 2 wherein the separate data buses        comprise:

a first data bus connecting the memory controller component to a firstslice of the slices; and

a second data bus connecting the memory controller component to a secondslice of the slices, wherein the first data bus and the second data buscarry different signals independently of each other.

4. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices; and

conductors coupling the memory controller component to the slices of therank of memory components, wherein the conductors comprise a first databus coupled to the memory controller component and the first slice and asecond data bus coupled to the memory controller component and thesecond slice, the first data bus being separate from the second databus, wherein first elements of information relating to the first sliceare driven on a first conductor of the conductors coupled to the firstslice for a first element time interval from a first time to a secondtime, wherein second elements of information relating to the secondslice are driven on a second conductor of the conductors coupled to thesecond slice for a second element time interval from a third time to afourth time, and wherein the memory controller component comprises alogic circuit adapted to accommodate a difference between the first timeand the third time that is greater than a first duration of the firstelement time interval.

5. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices, the slices comprising afirst slice and a second slice;

conductors coupling the memory controller component to the slices of therank of memory components, wherein the conductors comprise a first databus coupled to the memory controller component and the first slice and asecond data bus coupled to the memory controller component and thesecond slice, the first data bus being separate from the second databus, wherein first elements of information relating to the first sliceare driven on a first conductor of the conductors coupled to the firstslice for a first element time interval from a first time to a secondtime, wherein second elements of information relating to the secondslice are driven on a second conductor of the conductors coupled to thesecond slice for a second element time interval from a third time to afourth time; and

a logic circuit adapted to accommodate a difference between the firsttime and the third time that is greater than a cycle time of a clockcircuit of the memory controller component.

6. The memory system of clause 5 wherein the logic circuit isincorporated into the memory controller component.7. The memory system of clause 5 wherein the logic circuit isincorporated into at least one of the memory components.8. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices, the slices comprising afirst slice and a second slice;

a common address bus connecting the memory controller component to thefirst slice and the second slice in succession;

a first data bus connecting the memory controller component to the firstslice; and

a second data bus connecting the memory controller component to thesecond slice, the first data bus being separate from the second databus, wherein first elements of information are driven on the first databus for a first element time interval from a first time to a secondtime, wherein second elements of information are driven on the seconddata bus for a second element time interval from a third time to afourth time, wherein third elements of information are driven on thecommon address bus for a third element time interval from a fifth timeto a sixth time, wherein there is a first access time interval betweenthe fifth time and the first time, wherein fourth elements ofinformation are driven on the common address bus for a fourth elementtime interval from a seventh time to an eighth time, wherein there is asecond access time interval between the seventh time and the third time,and wherein at least one of the memory components of the rank of memorycomponents comprises a logic circuit adapted to accommodate a differencebetween the first access time interval and the second access timeinterval that is greater than a first duration of the first element timeinterval.

9. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices, the slices comprising afirst slice and a second slice;

conductors coupling the memory controller component to the slices of therank of memory components, wherein the conductors comprise a first databus coupled to the memory controller component and the first slice and asecond data bus coupled to the memory controller component and thesecond slice, the first data bus being separate from the second databus, wherein first elements of information relating to the first sliceare driven on a first conductor of the conductors coupled to the firstslice for a first element time interval, the first element time intervalassociated with a first timing signal event, wherein second elements ofinformation relating to the second slice are driven on a secondconductor of the conductors coupled to the second slice for a secondelement time interval, the second element time interval associated witha second timing signal event; and

a logic circuit adapted to accommodate a difference between the firsttiming signal event and the second timing signal event that is greaterthan a duration selected from a group consisting of the first elementtime interval and a cycle time of a clock circuit of the memorycontroller component.

10. The memory system of clause 9 wherein the logic circuit isincorporated into the memory controller component.11. The memory system of clause 9 wherein the logic circuit isincorporated into at least one of the memory components.12. A memory system comprising:

a memory controller component;

a rank of memory components comprising slices, the slices comprising afirst slice and a second slice;

a common address bus connecting the memory controller component to thefirst slice and the second slice in succession;

a first data bus connecting the memory controller component to the firstslice; and

a second data bus connecting the memory controller component to thesecond slice, wherein first elements of information are driven on thefirst data bus for a first element time interval, the first element timeinterval associated with a first timing signal event, wherein secondelements of information are driven on the second data bus for a secondelement time interval, the second element time interval associated witha second timing signal event, wherein third elements of information aredriven on the common address bus for a third element time interval, thethird element time interval associated with a third timing signal event,wherein there is a first access time interval between the third timingsignal event and the first timing signal event, wherein fourth elementsof information are driven on the common address bus for a fourth elementtime interval, the fourth element time interval associated with a fourthtiming signal event, wherein there is a second access time intervalbetween the fourth timing signal event and the second timing signalevent, and wherein at least one of the memory components of the rank ofmemory components comprises a logic circuit adapted to accommodate adifference between the first access time interval and the second accesstime interval that is greater than a first duration of the first elementtime interval.

13. A memory component adapted to be coupled to a memory controllercomponent as a first slice of a rank of memory components, the rankfurther comprising a second slice, wherein conductors couple the memorycontroller component to the first slice and the second slice, theconductors comprising a first data bus coupling the first slice to thememory controller component and a second data bus coupling the secondslice to the memory controller component, the first data bus beingseparate from the second data bus, the memory component comprising:

a logic circuit adapted to cause the memory controller component toaccommodate a difference between a first time and a third time that isgreater than a first duration of a first element time interval, whereinfirst elements of information are driven on a first conductor of theconductors coupled to the first slice for the first element timeinterval from the first time to a second time, wherein second elementsof information relating to the second slice are driven on a secondconductor of the conductors coupled to the second slice for a secondelement time interval from the third time to a fourth time.

14. A memory component adapted to be coupled to a memory controllercomponent as a first slice of a rank of memory components, the rankfurther comprising a second slice, a common address bus connecting thememory controller component to the first slice and the second slice insuccession, a first data bus connecting the memory controller componentto the first slice, a second data bus connecting the memory controllercomponent to the second slice, the first data bus being separate fromthe second data bus, the memory component comprising:

a logic circuit adapted to accommodate a difference between a firstaccess time interval and a second access time interval that is greaterthan a first duration of a first element time interval, wherein firstelements of information are driven on the first data bus for the firstelement time interval from a first time to a second time, wherein secondelements of information are driven on the second data bus for a secondelement time interval from a third time to a fourth time, wherein thirdelements of information are driven on the common address bus for a thirdelement time interval from a fifth time to a sixth time, wherein thefirst access time interval occurs between the fifth time and the firsttime, wherein fourth elements of information are driven on the commonaddress bus for a fourth element time interval from a seventh time to aneighth time, wherein the second access time interval occurs between theseventh time and the third time.

15. A memory component adapted to be coupled to a memory controllercomponent as a first slice of a rank of memory components, the rankfurther comprising a second slice, wherein conductors couple the memorycontroller component to the slices of the rank of memory components, theconductors comprising a first data bus coupled to the memory controllercomponent and the first slice and a second data bus coupled to thememory controller component and the second slice, the first data busbeing separate from the second data bus, the memory componentcomprising:

a logic circuit adapted to cause the memory controller component toaccommodate a difference between a first timing signal event and asecond timing signal event that is greater than a first duration of afirst element time interval, wherein first elements of information aredriven on a first conductor of the conductors coupled to the first slicefor the first element time interval, the first element time intervalassociated with the first timing signal event, wherein second elementsof information relating to the second slice are driven on a secondconductor of the conductors coupled to the second slice for a secondelement time interval, the second element time interval associated withthe second timing signal event.

16. A memory component adapted to be coupled to a memory controllercomponent as a first slice of a rank of memory components, the rank ofmemory components further comprising a second slice, a common addressbus connecting the memory controller component to the first slice andthe second slice in succession, a first data bus connecting the memorycontroller component to the first slice, a second data bus connectingthe memory controller component to the second slice, the memorycomponent comprising:

a logic circuit adapted to accommodate a difference between a firstaccess time interval and a second access time interval that is greaterthan a first duration of a first element time interval, wherein firstelements of information are driven on the first data bus for the firstelement time interval, the first element time interval associated with afirst timing signal event, wherein second elements of information aredriven on the second data bus for a second element time interval, thesecond element time interval associated with a second timing signalevent, wherein third elements of information are driven on the commonaddress bus for a third element time interval, the third element timeinterval associated with a third timing signal event, wherein the firstaccess time interval occurs between the third timing signal event andthe first timing signal event, wherein fourth elements of informationare driven on the common address bus for a fourth element time interval,the fourth element time interval associated with a fourth timing signalevent, wherein the second access time interval occurs between the fourthtiming signal event and the second timing signal event.

17. A method for conducting memory operations in a memory systemcomprising a memory controller component and a rank of memory componentscomprising slices, the slices comprising a first slice and a secondslice, the memory controller component coupled to conductors, theconductors including a common address bus connecting the memorycontroller component to the first slice and the second slice, a firstdata bus connecting the memory controller component to the first slice,and a second data bus connecting the memory controller component to thesecond slice, the first data bus being separate from the second databus, the method comprising the step of:

providing a signal to one of the conductors, the signal selected from agroup consisting of an address signal, a write data signal, and a readdata signal, wherein the propagation delay of the one of the conductorsis longer than an amount of time that an element of informationrepresented by the signal is applied to the conductor.

18. The method of clause 17 further comprising the step of:

providing a first data signal to the first data bus and a second datasignal to the second data bus, the first data signal relatingspecifically to the first slice and the second data signal relatingspecifically to the second slice.

19. A method for coordinating memory operations among a first memorycomponent and a second memory component, the method comprising the stepsof:

applying a first address signal relating to the first memory componentto a common address bus over a first time interval, the common addressbus coupled to the first memory component and the second memorycomponent;

applying a second address signal relating to the second memory componentto the common address bus over a second time interval, the first timeinterval being shorter than a propagation delay of the common addressbus and the second time interval being shorter than a common address buspropagation delay of the common address bus; and

controlling a first memory operation of the first memory component usinga first memory component timing signal, the first memory componenttiming signal dependent upon a first relationship between the commonaddress bus propagation delay and a first data bus propagation delay ofa first data bus coupled to the first memory component; and

controlling a second memory operation of the second memory componentusing a second memory component timing signal, the second memorycomponent timing signal dependent upon a second relationship between thecommon address bus propagation delay and a second data bus propagationdelay of a second data bus coupled to the second memory component.

20. A module comprising:

-   -   a first memory device having a memory array;    -   a first signal line coupled to the first memory device, the        first signal line to provide first data to the first memory        device, the first data to be stored in the memory array of the        first memory device during a write operation;    -   a second memory device having a memory array;    -   a second signal line coupled to the second memory device, the        second signal line to provide second data to the second memory        device, the second data to be stored in the memory array of the        second memory device during the write operation;    -   a first termination component; and    -   a control signal path coupled to the first memory device, the        second memory device, and the first termination component such        that a write command propagating on the control signal path        propagates past the first memory device and the second memory        device before reaching the first termination component, wherein        the write command specifies the write operation.        21. The module of clause 20, further comprising a third signal        line to convey a clock signal that indicates when the write        command propagating on the control signal path is to be sampled        by the first memory device, wherein the clock signal also        indicates when the write command propagating on the control        signal path is to be sampled by the second memory device.        22. The module of clause 20, further comprising:    -   a third signal line coupled to the first memory device, the        third signal line to convey a first signal that indicates when        the first memory device is to sample the first data in response        to the write command; and    -   a second signal line coupled to the second memory device, the        second signal line to convey a second signal that indicates when        the second memory device is to sample the second data in        response to the write command.        23. The module of clause 20, further comprising:    -   a second termination component coupled to the first signal line,        wherein the second termination component is disposed on the        first memory device; and    -   a third termination component coupled to the second signal line,        wherein the third termination component is disposed on the        second memory device.        24. A module comprising:    -   a first rank of memory devices including a first memory device,        and a second memory device;    -   a second rank of memory devices including a third memory device,        and a fourth memory device;    -   a first data signal line coupled to the first memory device and        the third memory device;    -   a second data signal line coupled to the second memory device        and the fourth memory device;    -   a termination component; and    -   a signal path coupled to the first rank of memory devices and        the second rank of memory devices memory device, and the        termination component such that control information propagating        on the control signal path propagates past the first rank of        memory devices and the second rank of memory devices before        reaching the termination component.        25. The module of clause 24, wherein the control information        specifies a write operation such that data is provided, via the        first and second signal lines, to one of the first rank of        memory devices and the second rank of memory device.        26. The module of clause 24, wherein the control information        propagating on the signal path propagates past the first memory        device before reaching the third memory device and propagates        past the third memory device before reaching the second memory        device, propagates past the second memory device before reaching        the fourth memory device and propagates past the fourth memory        device before reaching the termination component.        27. A module comprising:    -   a first memory device, a second memory device, a third memory        device, and a fourth memory device;    -   a first signal line coupled to the first memory device and the        third memory device, the first signal line being dedicated to        data transfers involving one of the first memory device and the        third memory device;    -   a second signal line coupled to the second memory device and the        fourth memory device, the second signal line being dedicated to        data transfers involving one of the second memory device and the        fourth memory device;    -   a first termination component; and    -   a control signal path coupled to the first memory device, second        memory device, third memory device, fourth memory device, and        the first termination component such that a command propagating        on the control signal path propagates past the first memory        device before reaching the third memory device, propagates past        the third memory device before reaching the second memory        device, propagates past the second memory device before reaching        the fourth memory device, and propagates past the fourth memory        device before reaching the first termination component.        28. The module of clause 27, further comprising:    -   a second termination component disposed on the first memory        device, wherein the second termination component is coupled to        the first signal line; and    -   a third termination component disposed on the second memory        device, wherein the third termination component is coupled to        the second signal line.        29. The module of clause 27, wherein    -   the first memory device and the second memory device are        included in a first rank of memory devices; and    -   the third memory device and fourth memory device are included in        a second rank of memory devices.        30. The module of clause 29, wherein the control signal path        includes signal lines to carry address information, such that        the address information propagating on the control signal path        propagates past the first memory device before reaching the        third memory device, propagates past the third memory device        before reaching the second memory device, propagates past the        second memory device before reaching the fourth memory device,        and propagates past the fourth memory device before reaching the        first termination component.

Accordingly, a method and apparatus for coordinating memory operationsamong diversely-located memory components has been described. It shouldbe understood that the implementation of other variations andmodifications of the invention in its various aspects will be apparentto those of ordinary skill in the art, and that the invention is notlimited by the specific embodiments described. It is thereforecontemplated to cover by the present invention, any and allmodifications, variations, or equivalents that fall within the spiritand scope of the basic underlying principles disclosed and claimedherein.

1. A memory controller component that generates a timing signal, thememory controller component to control a dynamic random access memorycomponent (DRAM), the memory controller component comprising: transmitcircuitry to transmit, to the DRAM: write data to be sampled by the DRAMon one more edges of the timing signal, the timing signal requiring afirst time interval to propagate from the memory controller component tothe DRAM; a first clock signal that requires a second time interval topropagate from the memory controller component to the DRAM; and a writecommand to be sampled by the DRAM on one or more edges of the firstclock signal, the write command associated with the write data; andadjusting circuitry to control transmit timing within the transmitcircuitry, the adjusting circuitry to adjust transmit timing of thewrite data and timing of the timing signal based on a difference betweenthe first and second time intervals such that a rising edge of thetiming signal at the DRAM is aligned with a rising edge of the firstclock signal at the DRAM.
 2. The memory controller component of claim 1,wherein the write data accompanies the timing signal while the writedata and the timing signal propagate from the memory controllercomponent to the DRAM.
 3. The memory controller component of claim 1,wherein the timing signal is a strobe signal.
 4. The memory controllercomponent of claim 1, wherein the timing signal is a second clocksignal.
 5. The memory controller component of claim 1, wherein thetransmit timing of the write data is adjusted by an amount thatincreases a signaling margin of the write data being sampled by theDRAM.
 6. The memory controller component of claim 1, wherein theadjusting circuitry comprises circuitry to adjust a phase of a transmitclock signal that times transmission of the write data.
 7. The memorycontroller component of claim 1, wherein the rising edge of the timingsignal is aligned with the rising edge of the first clock signal toenable the DRAM to receive both the write data and the write command ina single clock domain.
 8. The memory controller component of claim 1,wherein the rising edge of the timing signal is aligned with the risingedge of the first clock signal by adjusting timing of the timing signalsuch that the timing signal and the first clock signal transition from alow state to a high state at substantially the same time at respectivetiming signal inputs of the DRAM.
 9. The memory controller component ofclaim 1, wherein the adjusting circuitry comprises clock generationcircuitry to generate a plurality of phase-distributed clock signals andan internal clock signal, the plurality of phase-distributed clocksignals having phase offsets that are substantially evenly distributedwithin a cycle time of the internal clock signal, wherein the memorycontroller adjusts the transmit timing of the write data using clocksignals selected from the plurality of phase-distributed clock signals.10. The memory controller of claim 9, wherein the clock generationcircuitry comprises a phase-locked loop circuit to generate the internalclock signal based on a reference clock signal that has a lowerfrequency than the internal clock signal.
 11. The memory controllercomponent of claim 9, wherein the adjusting circuitry further comprisesa plurality of phase offset selection circuits, and wherein a phaseoffset selection circuit of the plurality of phase offset selectioncircuits selects a phase-distributed clock signal from the plurality ofphase-distributed clock signals to be a timing reference fortransmission of the write data.
 12. The memory controller of componentof claim 11, wherein the phase offset selection circuit comprises amultiplexer to select the phase-distributed clock signal.
 13. The memorycontroller component of claim 11, wherein the phase offset selectioncircuit comprises a phase interpolator to select the phase-distributedclock signal.
 14. The memory controller component of claim 1, whereinthe timing signal is transmitted such that the propagation of the timingsignal from the memory controller component to the DRAM trackspropagation of the write data from the memory controller component tothe DRAM.
 15. The memory controller component of claim 1, wherein thefirst clock signal is transmitted such that the propagation of the firstclock signal from the memory controller component to the DRAM via afirst signal path tracks propagation of the write command from thememory controller component to the DRAM via a second signal path. 16.The memory controller component of claim 1, wherein the first clocksignal is provided to the memory controller component from an externalclock signal generator circuit.
 17. The memory controller component ofclaim 1, wherein the transmit circuitry comprises: a first transmittercircuit to transmit the first clock signal; and a second transmittercircuit to transmit the write command, wherein transmission of the writecommand is timed using the first clock signal.
 18. A memory controllercomponent that generates a first timing signal and second timing signal,the memory controller for controlling a first dynamic random accessmemory component (DRAM) and a second DRAM, the memory controllercomponent comprising: transmit circuitry to transmit: a first clocksignal to the first DRAM and second DRAM, the first clock signalrequiring a first time interval to propagate from the memory controllercomponent to the first DRAM and a second time interval to propagate fromthe memory controller component to the second DRAM, wherein the secondtime interval is longer than the first time interval; first write datato the first DRAM but not the second DRAM, the first write data to besampled by the first DRAM on one or more edges of the first timingsignal, the first timing signal requiring a third time interval topropagate from the memory controller component to the first DRAM; secondwrite data to the second DRAM but not the first DRAM, the second writedata to be sampled by the second DRAM on one or more edges of the secondtiming signal, the second timing signal requiring a fourth time intervalto propagate from the memory controller component to the second DRAM;and a write command to the first DRAM and second DRAM, the write commandto be sampled by the first DRAM and second DRAM on one or more edges ofthe first clock signal and the write command indicating that the firstwrite data is to be stored within the first DRAM and the second writedata is to be stored within the second DRAM; and adjusting circuitry tocontrol transmit timing within the transmit circuitry, the adjustingcircuitry to adjust (i) transmit timing of the first write data andtiming of the first timing signal based on a difference between thefirst and third time intervals such that a rising edge of the firsttiming signal at the first DRAM is aligned with a first rising edge ofthe first clock signal at the first DRAM, and (ii) transmit timing ofthe second write data and timing of the second timing signal based on adifference between the second and fourth time intervals such that arising edge of the second timing signal at the second DRAM is alignedwith a second rising edge of the first clock signal at the second DRAM.19. The memory controller component of claim 18 wherein the first writedata accompanies the first timing signal while the first write data andthe first timing signal propagate from the memory controller componentto the first DRAM, and the second write data accompanies the secondtiming signal while the second write data and the second timing signalpropagate from the memory controller component to the second DRAM. 20.The memory controller component of claim 18, wherein the write commandand the first clock signal are transmitted to the first and second DRAMsvia respective sets of one or more signal lines, wherein each signalline of the respective sets of one or more signal lines is coupled tothe first and second DRAMs at different points along its length suchthat the first clock signal and write command propagate from the memorycontroller component past the first DRAM to the second DRAM, wherein thefirst clock signal arrives at the first DRAM before arriving at anyother DRAM and the write command arrives at the first DRAM beforearriving at any other DRAM.
 21. The memory controller component of claim18, wherein the first rising edge of the first clock signal is the sameedge as the second rising edge of the first clock signal.
 22. The memorycontroller component of claim 18, wherein the first timing signal andsecond timing signal are strobe signals.
 23. The memory controllercomponent of claim 18, wherein the first timing signal and second timingsignal are a second clock signal and third clock signal, respectively.24. The memory controller component of claim 18, wherein the transmittimings of the first write data and second write data are adjusted byamounts that increase the signaling margin when the first write data andsecond write data are respectively sampled by the first DRAM and secondDRAM.
 25. A memory controller component for controlling a dynamic randomaccess memory (DRAM), the memory controller component comprising: afirst transmitter circuit to transmit a first clock signal to the DRAM,wherein the first clock signal requires a first time interval topropagate from the memory controller component to the DRAM; a secondtransmitter circuit to transmit a write command to the DRAM to indicatethat write data is to be stored within the DRAM, wherein the writecommand is sampled by the DRAM on one or more edges of the first clocksignal; and a third transmitter circuit to transmit the write data tothe DRAM, wherein the write data is sampled by the DRAM on one or moreedges of a timing signal, wherein the timing signal requires a secondtime interval to propagate from the memory controller component to theDRAM; and adjusting circuitry to adjust transmit timing of the writedata and timing of the timing signal based on a difference between thefirst and second time intervals such that a rising edge of the timingsignal is aligned with a rising edge of the first clock signal at theDRAM.
 26. The memory controller component of claim 25, wherein the writedata accompanies the timing signal while the write data and timingsignal propagate from the memory controller component to the DRAM. 27.The memory controller component of claim 25, wherein the transmit timingof the write data is adjusted by an amount that increases a signalingmargin of the write data being sampled by the DRAM.
 28. The memorycontroller component of claim 25, wherein the adjusting circuitrycomprises circuitry to adjust a phase of a first transmit clock signalthat times transmission of the write data.
 29. The memory controllercomponent of claim 25, wherein the adjusting circuitry comprisescircuitry to adjust the timing of the timing signal such that the timingsignal and the first clock signal transition from a low state to a highstate at substantially the same time at respective timing signal inputsof the DRAM.
 30. The memory controller component of claim 25, whereinthe adjusting circuitry comprises clock generation circuitry to generatea plurality of phase-distributed clock signals and an internal clocksignal, the plurality of phase-distributed clock signals having phaseoffsets that are substantially evenly distributed within a cycle time ofthe internal clock signal, wherein the memory controller adjusts thetransmit timing of the write data using clock signals selected from theplurality of phase-distributed clock signals.
 31. The memory controllercomponent of claim 25, wherein the timing signal is transmitted suchthat the propagation of the timing signal from the memory controllercomponent to the DRAM tracks propagation of the write data from thememory controller component to the DRAM.
 32. The memory controllercomponent of claim 25, wherein the first clock signal is transmittedsuch that the propagation of the first clock signal from the memorycontroller component to the DRAM via a first signal path trackspropagation of the write command from the memory controller component tothe DRAM via a second signal path.
 33. The memory controller componentof claim 25, wherein the second transmitter circuit to transmit thewrite command to the DRAM comprises circuitry to transmit addressinformation to the DRAM, the address information indicating one or morestorage locations within the DRAM at which the write data is to bestored.
 34. A memory controller component for controlling a firstdynamic random access memory (DRAM) and a second DRAM, the memorycontroller component comprising: a first transmitter circuit to transmita first clock signal to the first DRAM and second DRAM, wherein thefirst clock signal requires a first time interval to propagate from thememory controller component to the first DRAM and a second time intervalto propagate from the memory controller component to the second DRAM,the second time interval being greater than the first time interval; asecond transmitter circuit to transmit a write command to the first DRAMand second DRAM to indicate that first write data is to be stored withinthe first DRAM and second write data is to be stored within the secondDRAM, wherein the write command is sampled by the first DRAM and secondDRAM on one or more edges of the first clock signal; a third transmittercircuit to transmit the first write data to the first DRAM but not thesecond DRAM, wherein the first write data is sampled by the first DRAMon one or more edges of a first timing signal, wherein the first timingsignal requires a third time interval, different from the first timeinterval, to propagate on a first timing signal wire from the memorycontroller component to the first DRAM; a fourth transmitter circuit totransmit the second write data to the second DRAM but not the firstDRAM, wherein the second write data is sampled by the second DRAM on oneor more edges of a second timing signal, wherein the second timingsignal requires a fourth time interval, different from the second timeinterval, to propagate on a second timing signal wire from the memorycontroller component to the second DRAM; and an adjusting circuit toalign a rising edge of the first timing signal with a first rising edgeof the first clock signal at the first DRAM by adjusting timing of thefirst timing signal based on the difference between the first timeinterval and third time interval, and to align a rising edge of thesecond timing signal with a second rising edge of the first clock signalat the second DRAM by adjusting timing of the second timing signal basedon the difference between the second time interval and fourth timeinterval.
 35. The memory controller component of claim 34, wherein thefirst write data accompanies the first timing signal while the firstwrite data and the first timing signal propagate from the memorycontroller component to the first DRAM, and the second write dataaccompanies the second timing signal while the second write data and thesecond timing signal propagate from the memory controller component tothe second DRAM.
 36. The memory controller component of claim 34,wherein the first timing signal and second timing signal are a secondclock signal and third clock signal, respectively.
 37. The memorycontroller component of claim 34, wherein the adjusting circuitcomprises (i) circuitry to adjust the timing of the first timing signalby an amount that increases the signaling margin when the first writedata is sampled by the first DRAM, and (ii) circuitry to adjust thetiming of the second timing signal by an amount that increases thesignaling margin when the second write data is sampled by the secondDRAM.
 38. The memory controller component of claim 34, wherein the writecommand and the first clock signal are transmitted to the first andsecond DRAMs via respective sets of one or more signal lines, whereineach signal line of the respective sets of one or more signal lines iscoupled to the first and second DRAMs at different points along itslength such that the first clock signal and write command propagate fromthe memory controller component past the first DRAM to the second DRAM,wherein the first clock signal arrives at the first DRAM before arrivingat any other DRAM and the write command arrives at the first DRAM beforearriving at any other DRAM.